Conductive Wall Shielding for Through-Substrate Via Noise

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Solution Overview

Problem

In 3D integration of semiconductor devices, through-substrate vias (TSVs) can cause noise and interference by coupling with semiconductor devices due to current flow, hindering their operation.

Innovation Solution

A conductive wall is introduced between the through-substrate via and semiconductor devices, electrically contacting the silicon substrate, providing electrical, physical, and chemical shielding to reduce coupling and interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If through-substrate vias are used for 3D integration, then interchip communication and power transmission are enabled, but noise and interference couple to semiconductor devices through the substrate

Engineering Contradiction:
Improve3D integration capabilityVSAvoidnoise and interference
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

A conductive wall is introduced as an intermediary element between the through-substrate via and the semiconductor device. The conductive wall is electrically connected to the substrate and creates a shielded region that prevents electromagnetic coupling between the via and the device, thereby eliminating noise and interference while preserving 3D integration functionality

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The substrate region is segmented into distinct zones: a via region containing the through-substrate via, a shielded region containing the semiconductor device, and a conductive wall separating them. This spatial segmentation prevents harmful electromagnetic interactions while maintaining the benefits of through-substrate via technology

Inventive Principle:
Principle #1Segmentation

2Power

If current flows through through-substrate vias, then power and signals are transmitted between chips, but electromagnetic coupling occurs with nearby semiconductor devices

Engineering Contradiction:
Improvepower transmissionVSAvoidelectromagnetic coupling
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The conductive wall acts as a mediator that blocks electromagnetic fields generated by current flow in the through-substrate via from coupling with adjacent semiconductor devices. The wall is electrically connected to the substrate, providing a controlled impedance boundary that prevents field leakage into the shielded region

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The conductive wall effectively shields semiconductor devices from noise and interference, improving device operation by maintaining a constant voltage potential and preventing mechanical stress and chemical contamination.

Implementation Method 1

A conductive wall is introduced between the through-substrate via and semiconductor devices, electrically contacting the silicon substrate, providing electrical, physical, and chemical shielding to reduce coupling and interference

Methodology Applied
Scientific EffectElectrical shielding: Faraday Cage

Implementation Method 2

A conductive wall is introduced between the through-substrate via and semiconductor devices, electrically contacting the silicon substrate, providing electrical, physical, and chemical shielding to reduce coupling and interference

Methodology Applied
Scientific EffectPhysical shielding: Physical Containment

Data Source

PatentUS9177923B2Through-substrate via shielding
Publication Date: 2015.11.03 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US9177923B2 patent drawing
  • US9177923B2 patent drawing
  • US9177923B2 patent drawing

AI summary

A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.