Conductivity-Controlled Power Semiconductor for Lower Switching Loss
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Solution Overview
Problem
Power semiconductor devices face limitations in reducing energy losses due to thermal dissipation and conduction losses, despite advancements in materials like silicon and wide bandgap semiconductors, as they rely on similar device physics and structures.
Innovation Solution
The introduction of conductivity-controlled power semiconductor devices with an additional terminal that actively modulates conductivity characteristics, reducing resistance and energy losses by up to 80-90% through the use of conductivity-controlled regions and structures, applicable to silicon-based and wide-bandgap materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional power semiconductor device structures are used, then device simplicity is maintained, but energy losses (switching and conduction) remain high
Solution Approach 1:
The device is segmented into multiple functional regions including a drift region, a first doped region, a second doped region, and a third doped region. Each region serves a specific purpose in reducing energy losses while maintaining overall device functionality. The drift region is divided into segments with different doping characteristics to optimize both conduction and switching performance.
Solution Approach 2:
Different regions of the device are assigned different doping polarities and conductivity characteristics tailored to their specific functions. The first doped region has one doping polarity while the second and third doped regions have opposite doping polarities, creating localized zones with optimized electrical properties for reducing both conduction and switching losses in specific areas of the device.
2Reliability
If wide bandgap materials are used, then material performance is improved, but device physics and structure remain similar to silicon devices
Solution Approach 1:
The device incorporates dynamically controllable conductivity through the inclusion of the third doped region coupled to a conductivity-controlled terminal. This allows the drift region's conductivity to be actively modulated during operation, enabling the device to adapt its characteristics based on operating conditions and reduce both conduction and switching losses dynamically rather than being fixed by material properties alone.
Solution Approach 2:
The invention changes the fundamental electrical parameters of the device by introducing regions with opposite doping polarities and implementing active conductivity control. This transforms the device from a passive component with fixed characteristics to an actively controllable device where conductivity, resistance, and loss characteristics can be dynamically adjusted regardless of the base material (silicon or wide bandgap).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces switching and conduction losses, leading to substantial energy savings and lower thermal regulation requirements across various power applications, with simulation results showing a substantial leap in loss reduction.
Implementation Method 1
a third semiconductor region having a third doping polarity material that is opposite in doping polarity material to a doped region comprising either one of the first doping polarity material or the second doping polarity material, the third semiconductor region being coupled to the conductivity-controlled terminal to generate, when energized, a second electric field that reduces the resistance of the first and second semiconductor regions
Data Source
AI summary
Exemplary power semiconductor devices configured with one or more conductivity-controlled device regions and structures that can actively modulate, via an additional conductivity-controlled terminal, the conductivity characteristics of the power device. Through this active modulation and device structure, the conductivity and thus resistance of the power semiconductor device can be altered to substantially reduce losses (switching and conduction) of the device during operations. The exemplary conductivity-controlled power semiconductor devices (also referred to herein as “CCBT”) can provide a substantial energy saving as well as reduce the thermal regulation requirements for any power application using additional conductivity-controlled circuitries. The conductivity-controlled device regions and structures can be applied to silicon-based power electronics, wide-bandgap power electronics, and any other classes of materials for power electronic devices.