Configurable Command Input Circuits for Semiconductor Memories

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Solution Overview

Problem

Semiconductor memory circuits face challenges in balancing lower power consumption with high-speed performance, as lower internal voltages reduce circuit performance at higher speeds and higher clock frequencies increase power consumption.

Innovation Solution

The semiconductor device incorporates a clock blocking circuit and input signal block that dynamically adjust clock frequencies and sampling modes to optimize power consumption and timing margins, using clock gating and sampling circuits to reduce power when not needed and improve timing accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by stationary object

If lower internal voltages are used, then power consumption is reduced, but circuit performance at higher speeds suffers

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit performance at higher speeds
Core Design Contradiction:
Use of energy by stationary objectVSSpeed

Solution Approach 1:

The patent implements dynamic voltage scaling by providing multiple voltage levels (first voltage level and second voltage level) that can be selectively applied to the memory circuit based on operational requirements. The circuit transitions between voltage levels dynamically, allowing optimal performance at high speeds when needed while reducing power consumption during normal operation.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the voltage parameter of the memory circuit by switching between different voltage levels. A voltage switch selectively connects the memory circuit to either the first voltage level or the second voltage level based on control signals, enabling adjustment of power consumption and performance characteristics through parameter modification.

Inventive Principle:
Principle #35Parameter changes

2Speed

If higher clock frequencies are used, then speed of memory access is improved, but power consumption increases

Engineering Contradiction:
Improvespeed of memory accessVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by stationary object

Solution Approach 1:

The patent dynamically adjusts clock frequency based on operational mode. During high-speed operations, the clock frequency is increased to improve memory access speed. During normal operations or idle periods, the clock frequency is reduced to minimize power consumption, achieving a dynamic balance between speed and energy usage.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent employs periodic clock gating techniques where clock signals are selectively enabled or disabled based on operational needs. By periodically activating or deactivating clock signals to functional blocks, the system achieves high-speed access when required while reducing average power consumption through intermittent operation.

Inventive Principle:
Principle #19Periodic action

3Area of stationary object

If circuit density is increased, then chip size is reduced, but power consumption and heat generation increase

Engineering Contradiction:
Improvechip sizeVSAvoidpower consumption
Core Design Contradiction:
Area of stationary objectVSUse of energy by stationary object

Solution Approach 1:

The patent applies different voltage levels to different regions or functional blocks within the memory circuit. By providing higher voltage to specific high-performance blocks when needed and lower voltage to other blocks during normal operation, the system achieves high density on a reduced chip area while managing power consumption through localized voltage control.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10446218B2Apparatuses and methods for configurable command and data input circuits forsemiconductor memories
Publication Date: 2019.10.15 MICRON TECHNOLOGY INC
  • US10446218B2 patent drawing
  • US10446218B2 patent drawing
  • US10446218B2 patent drawing

AI summary

Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.