Configurable MOSFET Gate Driver With Overshoot Protection
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Solution Overview
Problem
Existing control circuits for power field-effect transistors are prone to incorrect configuration, leading to potential damage when using the wrong control circuit or voltage supply, particularly for power MOSFET transistors, which lack adequate protection against voltage overshoots and undershoots.
Innovation Solution
An integrated circuit with a configurable control circuit for power field-effect transistors that includes a driver circuit, protection devices for preventing overshoots and undershoots, and a diagnosis circuit for monitoring load conditions, allowing for programmable voltage levels and type configuration via a serial bus signal, reducing component count and application time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a fixed control circuit design is used for power MOSFET transistors, then the circuit structure is simple, but the risk of incorrect configuration leading to transistor destruction is high
Solution Approach 1:
The control circuit employs a programmable voltage level at its output that can be dynamically configured based on the specific power MOSFET transistor being controlled. A configuration signal received at a second input allows the driver circuit to adapt its output voltage characteristics, transforming a static circuit into a dynamic, adaptable system that reduces configuration errors while maintaining structural simplicity
Solution Approach 2:
The invention changes the voltage level parameter at the output of the driver circuit based on configuration signals. By programmably adjusting the output voltage level to match the specific requirements of different power MOSFET transistors, the circuit avoids destructive misconfigurations without requiring completely different circuit designs for each transistor type
2Temperature
If separate integrated circuits are used for control circuits to limit temperature, then temperature control is improved, but the overall system complexity increases
Solution Approach 1:
The invention merges the control circuit and driver circuit into a single integrated circuit that controls the power MOSFET transistor. This integration allows temperature management while reducing overall system complexity compared to separate circuits, as the combined design optimizes thermal characteristics and interconnections
3Reliability
If protection circuitry is added to power transistors, then transistor reliability is improved, but the device complexity and cost increase
Solution Approach 1:
The control circuit serves as an intermediary between the control signal and the power MOSFET transistor, providing programmable voltage level adjustment and protection. This intermediary approach protects the transistor from voltage overshoots and undershoots without requiring complex protection circuitry to be integrated directly into the transistor structure itself
Data Source
AI summary
An integrated circuit has a control circuit (2) for a power field-effect transistor (3), wherein the integrated circuit has a first input (202) for receiving a control signal (CE) and an output to switch the field-effect transistor (3) on or off. The control circuit further has a driver circuit for providing a voltage level at the output in response of the control signal. A second input is provided for receiving a configuration signal, the configuration signal for configuring the voltage level being provided by the driver circuit in response to the control signal.