Conformal Dopant Layer for Uniform Distribution in Semiconductor Devices
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Solution Overview
Problem
As technology nodes decrease, controlling parasitic capacitance and contact resistance in contact plugs becomes increasingly difficult, especially with the challenges of in-situ doping and implantation processes for flowable silicon dioxide, which slow down manufacturing throughput and increase the risk of defects.
Innovation Solution
A conformal dopant layer is deposited onto the device, including into openings for conductive elements, and then annealed to drive dopants into the dielectric material, ensuring uniform dopant distribution and reducing parasitic capacitance and contact resistance, even in high aspect ratio openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If in-situ doping or implantation processes are used to dope flowable silicon dioxide, then dopant distribution can be achieved, but manufacturing throughput slows down and defect risk increases
Solution Approach 1:
The dopant layer is deposited in advance onto the planarized dielectric layer before contact hole formation. This preliminary doping action allows the dopant to be present and ready, and subsequent thermal processing during contact hole formation enables dopant diffusion without requiring separate doping steps, thus maintaining precision while improving throughput
Solution Approach 2:
The patent combines multiple process steps into one: contact hole formation, dopant diffusion, and dielectric modification are integrated into a single thermal processing step. This merging eliminates sequential processing steps, reducing cycle time and increasing manufacturing throughput while achieving uniform dopant distribution
2Manufacturing precision
If in-situ doping or implantation processes are used to dope flowable silicon dioxide, then dopant distribution can be achieved, but the risk of defects increases
Solution Approach 1:
The dopant layer is deposited in advance onto the planarized dielectric layer before contact hole formation. This preliminary doping action allows the dopant to be present and ready, and subsequent thermal processing during contact hole formation enables dopant diffusion without requiring separate doping steps, thus maintaining precision while improving throughput
Solution Approach 2:
The thermal processing step used for contact hole formation serves dual purposes: it forms the contact holes and simultaneously drives dopant diffusion into the dielectric layer. This self-service approach eliminates the need for separate doping processes that would introduce additional defect risks
3Manufacturing precision
If conformal dopant layer is deposited and annealed, then uniform dopant distribution is achieved, but process complexity increases
Solution Approach 1:
The patent combines multiple process steps into one: contact hole formation, dopant diffusion, and dielectric modification are integrated into a single thermal processing step. This merging eliminates sequential processing steps, reducing cycle time and increasing manufacturing throughput while achieving uniform dopant distribution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves manufacturing throughput, reduces defects, and achieves a more uniform dopant distribution, effectively decreasing parasitic capacitance and enhancing contact resistance, leading to improved device performance.
Implementation Method 1
depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer
Implementation Method 2
depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer
Implementation Method 3
diffusing the dopant from the conformal layer of dopant material into the dielectric layer using an anneal process
Data Source
AI summary
A method of making a device includes forming an opening in a dielectric layer to expose a conductive region in a substrate. The method further includes depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer. The method further includes diffusing the dopant from the conformal layer of dopant material into the dielectric layer using an anneal process.