Conformal Thin-Film Electrode Deposition for Wire Diode Biasing
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Solution Overview
Problem
Existing methods for manufacturing optoelectronic devices with wire diodes face challenges in achieving simple and effective electrical biasing on the front face of the substrate, often requiring materials suitable for both electrical conductivity and epitaxial growth, or involving localized doping steps.
Innovation Solution
A method involving directional physical vapor deposition to produce a conformal and continuous thin film electrode on the substrate and wire diodes, using a support with rotational and angular oscillation movements to ensure uniform deposition, allowing for improved charge carrier injection and electrical biasing of wire diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nucleation film made of electrically conductive material is used for electrical biasing, then electrical conductivity is improved, but the material must also be suitable for epitaxial growth of wire diodes which complicates material selection
Solution Approach 1:
The invention extracts the electrical biasing function from the epitaxial growth process. By depositing a separate conductive thin film after wire diode growth, the patent separates the requirements for epitaxial material compatibility from electrical conductivity requirements, allowing independent optimization of each function.
Solution Approach 2:
The conductive thin film is deposited in advance before wire diode assembly, establishing the electrical biasing infrastructure beforehand. This preliminary action allows the conductive film to be optimized independently of subsequent epitaxial growth requirements.
2Reliability
If localized doping steps are performed on the substrate, then electrical biasing capability is improved, but the manufacturing process complexity increases
Solution Approach 1:
The invention extracts the electrical biasing function from the substrate doping process. Instead of modifying the substrate through complex localized doping steps, a separate conductive thin film is deposited on the substrate surface, simplifying the manufacturing process while achieving the same electrical biasing capability.
Solution Approach 2:
The conductive thin film acts as an intermediary between the substrate and the wire diodes, providing electrical biasing without requiring direct modification of the substrate. This intermediary layer simplifies the overall manufacturing process by decoupling the biasing function from substrate preparation.
3Manufacturing precision
If directional physical vapour deposition is used with substrate rotation and oscillation, then conformal and continuous film deposition is achieved, but the deposition process complexity increases
Solution Approach 1:
The invention introduces dynamic movements (rotation and oscillation) to the substrate during deposition. These dynamic motions ensure uniform material distribution and conformal coverage of the wire diodes, achieving high manufacturing precision through controlled motion rather than static deposition.
Solution Approach 2:
The substrate undergoes periodic rotation and oscillation during the deposition process. These periodic movements create uniform deposition conditions that ensure continuous and conformal film formation, with the oscillation frequency and amplitude carefully controlled to match the wire diode geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient electrical biasing of wire diodes by ensuring a conformal and continuous thin film electrode, enhancing the injection of charge carriers and simplifying the manufacturing process while avoiding the need for materials with specific epitaxial growth properties.
Implementation Method 1
the support experiencing: a periodic rotational movement so that the sides of the wire diodes are exposed to the incident material flow at a rotation frequency fr
Implementation Method 2
a periodic oscillation movement of an angle of inclination α formed between a main axis As orthogonal to the substrate and a fixed axis Af parallel to the main deposition direction Dd
Implementation Method 3
directional physical vapour deposition in a main deposition direction Dd oriented towards the substrate and the wire diodes, resulting in an incident material flow of the electrically conductive material
Data Source
AI summary
A method for manufacturing an optoelectronic device comprising a substrate and wire diodes having an h:d spacing aspect ratio that is at least equal to 1, the method comprising a step of producing a conductive thin film by directional physical vapour deposition, the substrate experiences a periodic rotational movement and a periodic oscillation movement so that the conductive thin film is deposited on the substrate and the sides of the wire diodes in a conformal and continuous manner.