Conformal Interconnect Layout for Sub-18 Nm Pitch Patterning
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Solution Overview
Problem
Existing patterning technologies face challenges in accurately and efficiently forming interconnect structures with sub-24 nm pitches and conformal features, leading to issues such as parasitic resistance, capacitance, and defects in semiconductor devices.
Innovation Solution
Employing self-aligned quadruple patterning (SAQP) with modular interconnect structures featuring orthogonal and conformal lines and jogs, formed through selective cuts after spacer deposition or dielectric fill, to create a serpentine layout with minimal steps and non-conformal features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic patterning processes are used to fabricate interconnect structures, then manufacturing simplicity is maintained, but manufacturing precision deteriorates at sub-24 nm pitch scales
Solution Approach 1:
The patterning process is divided into multiple discrete stages: forming mandrels at a relaxed pitch, depositing spacers, selectively removing portions, and repeating the process. This segmentation allows each stage to be optimized independently, achieving sub-24 nm precision through cumulative refinement rather than attempting single-step patterning.
Solution Approach 2:
Mandrels are formed in advance at a larger, more manufacturable pitch before the final fine-pitch features are created through spacer deposition. This preliminary structuring establishes a template that guides subsequent patterning steps, enabling precise positioning of sub-24 nm features without directly patterning them at full resolution.
2Quantity of substance
If feature pitch is scaled down to sub-24 nm, then interconnect density is improved, but parasitic resistance and capacitance increase
Solution Approach 1:
The patent introduces vertical dimensionality through multi-layer interconnect structures with conformal features that wrap around vias and junctions. This three-dimensional routing allows signals to bypass resistive paths and reduces capacitive coupling between adjacent lines by utilizing spatial separation in the vertical dimension rather than relying solely on horizontal spacing.
Solution Approach 2:
The patent modifies geometric parameters of interconnect features including rounded corners, variable width sections, and optimized via dimensions. These parameter adjustments reduce electric field concentration at sharp corners (lowering capacitance) and optimize current distribution (reducing resistance), thereby mitigating parasitic effects while maintaining high density.
3Manufacturing precision
If conformal features are implemented in interconnect structures, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
Conformal spacers self-align to mandrel structures through deposition processes that automatically follow the mandrel contours. This self-aligning mechanism eliminates the need for additional alignment steps and complex positioning systems, achieving high precision conformal features through the inherent properties of the deposition process rather than through complex process control.
Data Source
AI summary
One or more systems, devices and/or methods provided herein relate to a circuit device having a modular or selectively designed interconnect structure with a plurality of conformal features. In the semiconductor realm, such achievements can allow for fabrication of a device with sub 18 nanometer (nm) or lesser pitch between adjacent and/or parallel lines of the interconnect structure. A device can comprise a semiconductor device having an interconnect structure having a first set of parallel lines and a second set of parallel lines, where the lines of the first set can be arranged in a transverse direction to the lines of the second set. The lines of the first set can be disposed orthogonally to the lines of the second set. The first second sets of lines can comprise first and second rounded jogs that are conformal to one another and which connect the first set of lines to the second set of lines.