Conformal Silicon Carbide Deposition Without Metal Surface Oxidation
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Solution Overview
Problem
Current PECVD processes for depositing silicon carbide films face challenges such as poor step coverage, high dielectric constants, and oxidation of metal surfaces, due to the breaking of Si—O and Si—C bonds which leads to undesirable film properties.
Innovation Solution
A method and system for preparing silicon carbide films using silicon-containing precursors with silicon-hydrogen bonds and/or silicon-silicon bonds, where the bonds are broken to form a reactive species while preserving silicon-oxygen, silicon-nitrogen, and silicon-carbon bonds, allowing for the formation of a conformal silicon carbide film without atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If PECVD processes are used to deposit silicon carbide films, then deposition can be achieved, but poor step coverage and high dielectric constants occur due to breaking of Si-O and Si-C bonds
Solution Approach 1:
The patent changes the energy state parameter of radical species from high energy to substantially low energy state. This parameter change allows the radical species to react with silicon-containing precursors without breaking Si-O and Si-C bonds, thereby maintaining film integrity and achieving both good step coverage and desirable film properties including lower dielectric constants
Solution Approach 2:
The patent introduces substantially low energy radical species as an intermediary that mediates the deposition process. These radical species enable conformal film deposition and good step coverage while their low energy state prevents unwanted bond breaking, thus serving as a mediator between deposition requirements and film quality
2Manufacturing precision
If PECVD processes are used to deposit silicon carbide films, then deposition can be achieved, but oxidation of metal surfaces occurs
Solution Approach 1:
The patent changes the energy state parameter of radical species to substantially low energy. This parameter change allows the radical species to be less reactive towards metal surfaces while still enabling conformal film deposition, thereby preventing metal surface oxidation while maintaining deposition conformality
Solution Approach 2:
The patent creates different reactivity conditions in different locations: substantially low energy radical species provide the necessary reactivity for conformal film deposition on substrates while being sufficiently gentle to prevent oxidation of metal surfaces, thus achieving local quality differentiation in the deposition process
3Productivity
If conventional PECVD processes are used, then deposition speed can be maintained, but undesirable film properties result from bond breaking
Solution Approach 1:
The patent changes the energy state parameter of radical species from high to substantially low energy. This allows maintaining deposition rate (productivity) while preventing unwanted bond breaking, thus achieving both high productivity and precise film composition control with desirable properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high conformality, low dielectric constants, and prevents oxidation of metal surfaces, resulting in silicon carbide films with improved electrical and mechanical properties suitable for various applications.
Implementation Method 1
The one or more radical species can be formed in a remote plasma source
Implementation Method 2
A substantially conformal layer of silicon carbide can be provided using a process employing silicon-containing precursors
Implementation Method 3
introducing from a source gas one or more radical species in a substantially low energy state to react with the silicon-containing precursor to form the silicon carbide film on the substrate under conditions that break the silicon-containing precursor's silicon-hydrogen bonds or silicon-silicon bonds but substantially preserve the silicon-containing precursor's silicon-carbon bonds
Data Source
AI summary
Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.