Connected Edge Ring Hardware for Plasma Edge Profile Control
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Solution Overview
Problem
Newer substrate processing equipment using DC generators struggles with controlling the plasma edge profile due to poor edge response, leading to non-uniform etching and deposition rates at the substrate perimeter, which affects die yields and process uniformity.
Innovation Solution
A substrate processing apparatus featuring a process kit with an edge ring, sliding ring, actuating mechanism, and power coupling mechanism that electromechanically couples DC power to the edge ring, allowing for precise adjustment of the plasma sheath shape and ion direction at the substrate edge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If DC generators are used to control plasma profile, then processing capabilities are expanded, but edge response and plasma profile control deteriorate
Solution Approach 1:
The patent introduces an RF coupling mechanism as an intermediary between the DC power source and the plasma edge. The RF signal is coupled through the process kit (deposition ring, edge ring, support ring) to provide enhanced edge response, while the DC power provides the bulk plasma control. This intermediary approach allows both DC versatility and RF edge control to coexist.
2Manufacturing precision
If conventional RF coupling is used, then plasma edge profile control is achieved, but processing capability expansion is limited
Solution Approach 1:
The patent merges RF and DC power coupling systems into a single integrated process kit. The RF coupling provides precise edge profile control through traditional mechanisms, while the DC power source expands processing capabilities for newer techniques. Both power sources work simultaneously through the same hardware configuration, achieving dual functionality.
3Manufacturing precision
If process kits are added to control edge effects, then deposition and etching uniformity improve, but device complexity increases
Solution Approach 1:
The process kit is designed as a universal assembly that serves multiple functions: it provides RF coupling for edge control, supports DC power delivery, and maintains mechanical stability. The same hardware configuration (deposition ring, edge ring, support ring assembly) handles both RF and DC operations, reducing the need for separate specialized components for each function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves etch rate uniformity across the substrate surface by effectively controlling the plasma sheath, enhancing die yield and processing precision.
Implementation Method 1
The power coupling mechanism electromechanically coupled to the sliding ring and configured to electro mechanically couple to a cathode providing DC power
Implementation Method 2
A height of a component of an edge ring is adjusted by actuating a sliding ring interfaced with the component to change a direction of ions at an edge of the substrate
Data Source
AI summary
Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, a sliding ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the sliding ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the sliding ring. The actuating mechanism is configured to actuate the sliding ring such that the gap between the first ring component and the second ring component varies.