Connecting Hole Barrier Ring for Semiconductor Post Isolation
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Solution Overview
Problem
During the fabrication of semiconductor structures, the conductive objects in the wiring layer tend to diffuse onto the insulating layer, forming leakage paths and reducing the isolation performance of connecting posts.
Innovation Solution
A barrier ring with lower diffusibility than the conductive objects is formed on the insulating layer within the connecting hole, preventing the conductive objects from diffusing and enhancing the isolation performance by acting as a barrier during the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the wiring layer is etched to form a connecting hole, then the connecting structure is formed, but conductive objects are sputtered and diffuse on the insulating layer forming leakage paths
Solution Approach 1:
A barrier ring made of tungsten or other barrier materials is introduced as an intermediary layer between the insulating layer and the wiring layer. This barrier ring acts as a mediator that prevents direct contact and diffusion between conductive objects and the insulating layer, thereby eliminating leakage paths while maintaining the connecting structure's functionality.
Solution Approach 2:
The barrier ring is formed on the insulating layer before the wiring layer is etched to create the connecting hole. This preliminary action ensures that when etching occurs, conductive objects cannot diffuse onto the insulating layer because the barrier ring is already in place to prevent such diffusion, thus preventing leakage path formation in advance.
2Reliability
If a barrier ring is added to prevent diffusion, then isolation performance is improved, but device complexity increases
Solution Approach 1:
The barrier ring is applied locally only at critical positions where diffusion prevention is needed - specifically on the insulating layer within the connecting hole area. This localized application provides targeted isolation performance improvement without requiring a complete restructuring of the entire device, thus limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier ring effectively prevents the formation of leakage paths, thereby improving the isolation performance of the connecting posts and maintaining the integrity of the semiconductor structure.
Implementation Method 1
diffusibility of the barrier ring is less than diffusibility of the wiring layer... preventing the conductive objects from diffusing
Data Source
AI summary
A semiconductor structure and a method for fabricating a semiconductor structure are provided. In the semiconductor structure, a side of a film layer structure facing away from a substrate is provided with a wiring layer, a side of the substrate facing away from the film layer structure is provided with a connecting hole extending to the wiring layer, and an insulating layer is arranged on a hole wall of the connecting hole. A barrier ring is arranged on the insulating layer, a center line of the barrier ring is arranged collinearly with a center line of the connecting hole, and diffusibility of the barrier ring is less than diffusibility of the wiring layer. A connecting post joined to the wiring layer is arranged in the connecting hole.