Multi-portion Connection Element Height Compensation
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Solution Overview
Problem
Semiconductor device packages face reliability issues due to height discrepancies in connection elements caused by varying plating conditions and patterns, affecting the reliability of external connections.
Innovation Solution
A semiconductor substrate design featuring a dielectric layer, a patterned conductive layer, and connection elements with a seed layer between portions, forming a monolithic structure to ensure consistent height and prevent voids, using two plating operations with different solutions to compensate for height differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If connection elements are formed using conventional plating processes, then manufacturing is simpler, but height discrepancies occur between connection elements
Solution Approach 1:
The connection element is divided into multiple portions (first portion, second portion, third portion) with different cross-sectional areas. The seed layer is selectively removed from certain portions to create different plating surface areas, enabling precise control over final heights of different connection elements through controlled differential plating.
Solution Approach 2:
Different portions of the seed layer are selectively removed to create local variations in plating surface area. This local quality differentiation allows specific connection elements to grow at different rates during plating, compensating for initial height variations and achieving uniform final heights.
2Reliability
If connection elements have different heights, then manufacturing is easier, but external connection reliability deteriorates
Solution Approach 1:
The patent employs a feedback mechanism where the seed layer removal pattern is designed based on predicted plating behavior. By calculating which portions need additional material removal to achieve uniform heights, the process compensates for differential plating rates, ensuring all connection elements reach the same final height for reliable external connections.
3Reliability
If additional structures are added to compensate for height differences, then connection reliability improves, but device size increases
Solution Approach 1:
The patent merges the height compensation function into the connection element structure itself by creating multi-portion connection elements with varying cross-sectional areas. This eliminates the need for separate compensation structures like additional solder balls, achieving both reliability and miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design ensures consistent connection element heights, enhances reliability by minimizing voids, and facilitates miniaturization of semiconductor packages by eliminating the need for additional solder ball structures.
Implementation Method 1
a first patterned conductive layer and a connection element. The dielectric layer has a first surface. The first patterned conductive layer has a first surface and is disposed adjacent to the first surface of the dielectric layer. The first connection element is disposed on the first surface of the first patterned conductive layer.
Data Source
AI summary
A semiconductor substrate includes a dielectric layer, a first patterned conductive layer and a first connection element. The dielectric layer has a first surface. The first patterned conductive layer has a first surface and is disposed adjacent to the first surface of the dielectric layer. The first connection element is disposed on the first surface of the first patterned conductive layer. The first connection element includes a first portion, a second portion and a seed layer disposed between the first portion and the second portion. The first portion of the first connection element and the first patterned conductive layer are formed to be a monolithic structure.