Connector Structure with Lateral Extending Part for 3D Memory
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Solution Overview
Problem
Conventional connector structures in 3D memory devices have complex fabrication processes and often result in high capacitance values, leading to increased power consumption and decreased operating speed.
Innovation Solution
A connector structure comprising a conductive connecting element with a connecting part and an extending part, where the extending part laterally extends outwards from the connecting part and is formed of different materials, allowing for self-aligned etching processes and reduced capacitance values.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional connector structures are used, then the fabrication process is complex and additional etching masks are required, but the capacitance value becomes too high leading to increased power consumption
Solution Approach 1:
The patent extracts and removes the additional etching mask layer from the fabrication process. By designing the connector structure to be formed directly on the conductive layer without requiring a separate etching mask, the process complexity is reduced while avoiding the capacitance increase that would result from adding mask material layers
Solution Approach 2:
The connector structure serves its own fabrication function by being formable through direct deposition or growth processes without requiring external etching masks. The structure self-defines its pattern through the deposition process itself, eliminating the need for separate masking steps
2Device complexity
If conventional connector structures with additional etching masks are used, then the fabrication process becomes more complex, but the capacitance value increases excessively
Solution Approach 1:
The patent removes the harmful element (additional etching mask) from the fabrication process. By eliminating this extra layer, both the device complexity is reduced and the harmful capacitance effect is avoided, as the mask material would otherwise add to the overall capacitance of the connector structure
Solution Approach 2:
The patent changes the fabrication parameters by adopting direct deposition or growth methods instead of conventional photolithography with etching masks. This parameter change reduces the number of process steps and eliminates the capacitance contribution from mask materials
3Ease of manufacture
If the extending part covers the entire surface of the connecting part, then the fabrication is simplified, but the capacitance value becomes too high
Solution Approach 1:
The patent applies local quality by making the extending part selectively cover only specific regions of the connecting part rather than the entire surface. This localized coverage maintains fabrication simplicity while precisely controlling the capacitance by limiting the overlapping area between conductive elements
Solution Approach 2:
The patent uses partial action by having the extending part cover only the necessary portion of the connecting part surface, rather than the entire surface. This partial coverage is sufficient for the electrical connection function while avoiding excessive capacitance that would result from full surface coverage
Data Source
AI summary
A connector structure for electrically contacting with a conductive layer disposed on a substrate is provided. The connector structure comprises a conductive connecting element disposed on the substrate. The conductive connecting element comprises a connecting part and an extending part. The connecting part has a bottom portion electrically contacting with the conductive layer. The extending part laterally extends outwards from a top portion of the connecting part, and the extending part and the connecting part are respectively formed of different materials.