Semiconductor Contact Cap Layout for Short-Circuit Prevention
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multifunctional semiconductor devices necessitates fine-patterned designs with narrow separation distances, leading to a higher risk of short-circuit phenomena between contact structures and interconnection lines.
Innovation Solution
The semiconductor device incorporates contact structures with varying horizontal widths, featuring conductive cap layers on contact vias that are narrower than the vias themselves, minimizing the risk of short-circuits by ensuring precise alignment and reducing contact defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact structures are designed with fine patterns and narrow separation distances to increase integration, then device functionality and speed are improved, but the risk of short-circuit phenomena between contact structures and interconnection lines increases
Solution Approach 1:
The patent applies local quality by giving different horizontal widths to different contact structures. Specifically, gate contact structures have a first horizontal width while source/drain contact structures have a second horizontal width that is different from the first. This localized differentiation allows optimization of each contact type for its specific function while managing short-circuit risks in different regions of the device.
Solution Approach 2:
The patent employs asymmetry by designing contact structures with non-uniform horizontal widths. The gate contact structures and source/drain contact structures are intentionally made asymmetric in dimension, breaking the symmetry of conventional uniform contact designs. This asymmetric design enables better control over electrical connections and reduces short-circuit phenomena by creating distinct separation characteristics for different contact types.
2Area of stationary object
If contact structures are made with smaller dimensions to achieve fine patterning, then device density is improved, but manufacturing precision and alignment accuracy become more difficult to maintain
Solution Approach 1:
The patent applies parameter changes by varying the horizontal width parameter of different contact structures. Gate contact structures have a first horizontal width parameter while source/drain contact structures have a second horizontal width parameter. This parameter differentiation provides manufacturing tolerance buffer zones that help maintain alignment accuracy even when working with fine-pitched, small-dimension features.
Data Source
AI summary
A semiconductor device includes: an active region on a substrate; a gate structure intersecting the active region and including a gate electrode; a source/drain region on the active region; a first contact structure on and connected to the source/drain region; first and second insulating layers on the gate and first contact structures; a second contact structure connected to the gate electrode and including: a first contact via in the first insulating layer; and a first conductive cap layer in the second insulating layer and on the first contact via; a via structure connected to the first contact structure, the via structure including: a second contact via in the first insulating layer; and a second conductive cap layer in the second insulating layer and on the second contact via; and interconnection lines on the second insulating layer connected to the second contact structure and the via structure.