Semiconductor Contact and Defect Layer Structure for Injection Efficiency
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing injection efficiency, particularly in power semiconductor devices handling high voltages and currents, where control over dopant doses is insufficient to achieve desired performance.
Innovation Solution
A semiconductor device structure comprising a contact layer with higher activated dopant concentration and a defect layer with lower activated dopant concentration, where the dopants are introduced through implantation and annealing processes to control amorphousness and injection efficiency, and a method for producing this structure involving multiple heating steps to optimize dopant placement and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If dopant doses are varied to control injection efficiency, then injection efficiency can be adjusted, but manufacturing precision and reliability are insufficient
Solution Approach 1:
The contact layer is divided into two distinct regions: a first region with higher activated dopant concentration and a second region with lower activated dopant concentration. This segmentation allows independent optimization of injection efficiency (first region) and manufacturing precision (second region), resolving the contradiction between adaptability and manufacturing precision.
Solution Approach 2:
Different regions of the contact layer are assigned different dopant concentrations tailored to their specific functional requirements. The first region has higher dopant concentration for optimal injection efficiency, while the second region has lower dopant concentration for improved manufacturing precision and reliability, eliminating the need for uniform dopant dosing across the entire contact layer.
2Ease of manufacture
If single ion implantation processing step is used, then manufacturing process is simplified, but injection efficiency optimization is insufficient
Solution Approach 1:
Dopants are introduced into the contact layer in advance through ion implantation, creating a dopant distribution profile that will yield the desired two-region structure after activation. This preliminary doping action, combined with selective annealing, enables precise control of injection efficiency while maintaining manufacturing simplicity.
Solution Approach 2:
The dopant concentration profile is optimized by controlling annealing parameters (temperature, time, atmosphere) to achieve partial activation. This parameter control creates the distinctive two-region structure with different activated dopant concentrations, enabling injection efficiency optimization without adding complex processing steps.
3Productivity
If dopant concentration is increased to improve injection efficiency, then device performance improves, but device complexity increases
Solution Approach 1:
The contact layer is segmented into two regions with different dopant concentrations, where the first region has higher concentration for improved device efficiency and the second region has lower concentration to maintain manufacturability. This segmentation resolves the contradiction between productivity and device complexity by creating a structured yet manageable dopant distribution.
Solution Approach 2:
The contact layer functions as a composite structure with two distinct dopant concentration zones, combining the benefits of high-dopant regions (improved injection efficiency) and low-dopant regions (reduced complexity). This composite approach enables optimized device performance without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure allows for pre-setting injection efficiency according to needs, improving performance in high-voltage and high-current applications by optimizing dopant distribution and crystal lattice amorphousness, thereby enhancing device efficiency and reliability.
Implementation Method 1
the semiconductor film is heated at least in regions such that a contact layer and a defect layer are generated
Implementation Method 2
at least some of the first dopants can move from interstitial lattice sites to substitutional lattice sites
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A structure (1) for a semiconductor device is provided, with - a contact layer (4) comprising first dopants of a first conductivity type, - a base layer (2) of a second conductivity type, and - a defect layer (5) comprising first dopants of the first conductivity type, wherein - a concentration of the first dopants being activated in the contact layer (4) is higher than a concentration of the first dopants being activated in the defect layer (5). Further, a method for producing a structure for a semiconductor device is provided.