Source/Drain Contact Deposition After Remote Plasma De-Segregation
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Solution Overview
Problem
As semiconductor devices approach smaller feature sizes, such as the 5 nm and 3 nm process nodes, challenges arise in forming reliable source/drain contacts with minimal segregation and void formation, which can impact device performance and yield.
Innovation Solution
A non-segregating process is employed to form source/drain contacts, involving the use of remote plasma treatment to remove base layers and prevent material segregation, followed by conductive contact deposition, ensuring a clean and smooth surface for further processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional contact formation processes are used at smaller feature sizes, then manufacturing complexity is reduced, but material segregation and void formation increase, worsening contact reliability
Solution Approach 1:
The patent applies preliminary action by performing remote plasma treatment on the contact surface before depositing the conductive material. This pre-treatment step removes base layers and prepares the surface in advance, preventing material segregation and void formation during subsequent processing, thereby improving contact reliability at smaller feature sizes
Solution Approach 2:
The patent introduces remote plasma as an intermediary treatment between contact formation and conductive material deposition. This intermediary step mediates the interface conditions, ensuring clean surface preparation without direct contact that could cause segregation, thus resolving the contradiction between reliability and harmful factors
2Productivity
If feature sizes are reduced to increase integration density, then productivity is improved, but manufacturing precision deteriorates due to increased material segregation and void formation
Solution Approach 1:
By performing remote plasma treatment as a preliminary step before contact formation, the patent prepares surfaces in advance to prevent material segregation. This allows reduced feature sizes to be manufactured with maintained precision, enabling higher integration density without sacrificing contact quality
Solution Approach 2:
The patent changes the physical-chemical parameters of the contact surface through remote plasma treatment, modifying surface properties to prevent segregation. This parameter change enables precise contact formation at smaller dimensions, reconciling productivity improvement with manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material segregation and void formation, enhancing the surface quality of contacts and improving the overall yield and performance of semiconductor devices at advanced process nodes.
Implementation Method 1
introducing a plasma into the treatment chamber
Implementation Method 2
depositing a conductive material onto the contact
Data Source
AI summary
A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.