Semiconductor Contact Hole Layout to Prevent Bridging Shorts
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Solution Overview
Problem
The miniature dimensions of semiconductor structures make them prone to single-point bridging during fabrication, leading to short circuits due to mutual contact between conductive contacts, which adversely affects the performance of the semiconductor structure.
Innovation Solution
A method for fabricating a semiconductor structure involves forming a substrate with active areas, a barrier layer, and an insulating layer. Intervening trenches and filling layers are strategically formed and removed to create contact holes, which are separated by the barrier layer, thereby reducing the likelihood of short circuits between conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the dimension of the semiconductor structure is miniaturized to improve integration density, then the area occupied by each component is reduced, but the risk of single-point bridging and short circuits between conductive contacts increases
Solution Approach 1:
The patent applies segmentation by dividing the contact formation process into multiple sequential steps: first forming trenches in the barrier layer, then forming filling layers in these trenches, and finally forming contact holes by removing exposed filling layers. This segmented approach creates isolated contact regions separated by barrier layer segments, preventing bridging between adjacent contacts while enabling miniaturization.
Solution Approach 2:
The patent uses the barrier layer as an intermediary element between adjacent contact regions. The barrier layer is strategically positioned and maintained between contacts during the fabrication process, acting as a physical separator that prevents direct contact between conductive elements. This intermediary structure enables closer spacing of contacts without increasing short circuit risk.
2Device complexity
If conventional single-step contact hole formation is used to simplify the fabrication process, then the manufacturing complexity is reduced, but single-point bridging occurs leading to short circuits
Solution Approach 1:
The fabrication process is segmented into distinct stages: trench formation in barrier layer, filling layer deposition, and selective removal to form contact holes. Each stage serves a specific function in ensuring contact isolation, and the segmentation allows for better control of each step to prevent bridging while maintaining overall process manageability.
Solution Approach 2:
The patent performs preliminary actions by first forming trenches in the barrier layer and filling them with filling layers before forming the final contact holes. This preliminary structuring of the barrier layer creates predefined isolation regions that guide subsequent contact hole formation, ensuring that contacts are formed in isolated regions from the outset, thereby preventing bridging before it can occur.
Data Source
AI summary
Embodiments provide a semiconductor structure and a fabricating method. The method includes: providing a substrate, where a plurality of active areas arranged at intervals are provided in the substrate, and the substrate is covered with an insulating layer and a barrier layer stacked sequentially; forming, in the barrier layer, a plurality of first trenches arranged at intervals and extending along a first direction and penetrating through the barrier layer; forming a filling layer in the first trenches, and forming a first mask layer on the barrier layer and the filling layer; forming, in the first mask layer, a plurality of second trenches arranged at intervals and extending along a second direction and exposing the filling layer; and removing the filling layer exposed in the second trench and the insulating layer corresponding to the filling layer to form contact holes.