Contact Plug Insulation Patterns With Graded Carbon Concentration
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Solution Overview
Problem
As semiconductor devices become highly integrated, the decreasing separation distance between contact plugs can lead to deteriorated electrical characteristics.
Innovation Solution
A semiconductor device is designed with a gate structure, source and drain layers, first and second contact plugs, and an insulation pattern structure featuring insulation patterns with different carbon concentrations to prevent electrical shorts and improve electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the separation distance between contact plugs is decreased to achieve high integration, then device integration density is improved, but electrical characteristics deteriorate due to potential electrical shorts
Solution Approach 1:
The patent applies local quality by creating insulation patterns with spatially varying carbon concentrations. The first insulation pattern has a first carbon concentration while the second insulation pattern has a second carbon concentration different from the first. This localized variation in material composition allows different regions to provide different functions: better insulation where needed and appropriate dielectric properties elsewhere, thereby preventing electrical shorts between closely spaced contact plugs while maintaining high integration density.
Solution Approach 2:
The patent employs composite materials by combining insulation patterns with different carbon concentrations in a single structure. The insulation pattern structure comprises multiple layers or regions with varying carbon content, creating a composite dielectric material system. This composite approach enables optimized electrical insulation properties and mechanical characteristics that cannot be achieved with a single uniform material composition.
Data Source
AI summary
A semiconductor device includes a gate structure disposed on a substrate; a source and drain layer disposed on the substrate adjacent the gate structure; a first contact plug disposed on the source and drain layer, an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and a second contact plug disposed on the gate structure.