Contact Plug Doping Layout for Dense Integrated Circuits
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Solution Overview
Problem
As integrated circuit devices become more densely integrated, the increased resistance distributions of contact plugs lead to deteriorated electrical performance and reliability due to varying sizes and dopant concentrations.
Innovation Solution
The integration of contact plugs with varying widths and dopant concentrations, where each contact plug has a specific width and dopant concentration tailored to its respective active region, is implemented to control resistance distributions and improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact plug sizes are reduced to achieve higher integration density, then integration density is improved, but resistance distributions increase leading to deteriorated electrical performance
Solution Approach 1:
The patent applies local quality by assigning different dopant concentrations to contact plugs based on their individual widths. Specifically, contact plugs with widths in the range of 10 nm to 20 nm are doped at a first dopant concentration, while contact plugs with widths greater than 20 nm are doped at a second dopant concentration that is lower than the first. This localized differentiation of dopant concentration compensates for the increased resistance distributions caused by size variations, thereby maintaining electrical performance reliability while achieving higher integration density
2Productivity
If contact plug sizes are reduced to achieve higher integration density, then integration density is improved, but contact plug size distributions increase
Solution Approach 1:
The patent applies parameter changes by adjusting the dopant concentration parameter according to the contact plug width parameter. By establishing a correlation between width and dopant concentration (higher dopant concentration for narrower contact plugs, lower dopant concentration for wider contact plugs), the invention compensates for size distribution variations. This parameter adjustment ensures that electrical resistance remains within acceptable ranges despite variations in contact plug dimensions, thereby maintaining manufacturing precision in terms of electrical performance while enabling higher integration density
3Ease of manufacture
If uniform dopant concentration is used across all contact plugs, then manufacturing process is simplified, but resistance distributions increase due to varying contact plug sizes
Solution Approach 1:
The patent implements local quality by differentiating dopant concentrations based on contact plug width categories. Contact plugs with widths of 10 nm to 20 nm receive a first dopant concentration, while contact plugs with widths greater than 20 nm receive a second, lower dopant concentration. This localized differentiation compensates for the resistance increases associated with larger contact plug sizes, thereby maintaining reliable resistance distributions while keeping the manufacturing process relatively simple through categorical classification
4Reliability
If contact plug widths are increased to reduce resistance, then electrical performance is improved, but integration density decreases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting dopant concentration based on contact plug width. For narrower contact plugs (10-20 nm), a higher first dopant concentration is used to compensate for the inherently higher resistance. For wider contact plugs (>20 nm), a lower second dopant concentration is sufficient. This parameter adjustment allows each contact plug to achieve optimal electrical performance regardless of its width, enabling the use of smaller contact plugs for higher integration density without sacrificing electrical performance
Data Source
AI summary
An integrated circuit device includes; word lines extending in a first direction across a substrate and spaced apart in a second direction different from the first direction, bit lines extending on the word lines in the second direction and spaced apart in the first direction, a first contact plug arranged among the bitlines, contacting a first active region of the substrate, having a first width, and having a first dopant concentration, and a second contact plug arranged among the bitlines, contacting a second active region of the substrate, having a second width, and having a second dopant concentration less than the first dopant concentration.