3D Semiconductor Contact Plug Alignment With Etch Stop Pattern
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Solution Overview
Problem
The manufacturing process of three-dimensional semiconductor devices is prone to failures due to various reasons, which can reduce the operational reliability of the resultant semiconductor device.
Innovation Solution
A semiconductor device with an etch stop pattern and insulating layer configuration, including a contact plug that passes through the insulating layer to couple with channel structures, is designed to enhance manufacturing reliability by mitigating misalignment issues and process failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for three-dimensional semiconductor devices, then manufacturing complexity is reduced, but process failures occur due to misalignment and various reasons, reducing operational reliability
Solution Approach 1:
An etch stop pattern is formed in advance on the gate stack before subsequent manufacturing steps. This preliminary structure serves as a reference and protection layer that prevents misalignment and process failures in later stages, thereby improving operational reliability without significantly increasing overall manufacturing complexity
Solution Approach 2:
The etch stop pattern acts as an intermediary layer between the gate stack and the insulating layer. This intermediate structure facilitates precise alignment and protects the underlying gate stack during manufacturing processes, reducing process failures while maintaining a manageable manufacturing process
2Manufacturing precision
If simple insulating layer coverage is used, then manufacturing process is simpler, but misalignment occurs between contact plugs and channel structures
Solution Approach 1:
The etch stop pattern is formed preliminarily on the gate stack before forming the insulating layer. This pre-formed pattern serves as an alignment reference that enables precise positioning of subsequent structures such as contact plugs, thereby improving manufacturing precision while maintaining ease of manufacture
Solution Approach 2:
The etch stop pattern functions as an intermediary reference layer that mediates the alignment between the insulating layer and the underlying gate stack. This intermediate structure simplifies the manufacturing process by providing a clear alignment target, improving both precision and ease of manufacture
Data Source
AI summary
Provided herein are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes an etch stop pattern having a top surface and a sidewall disposed over a gate stack having interlayer insulating layers alternately stacked with conductive patterns. The semiconductor device also includes a plurality of channel structures passing through the etch stop pattern and the gate stack. The semiconductor device further includes an insulating layer extending to cover the top surface and the sidewall of the etch stop pattern, wherein a depression is included in a sidewall of the insulating layer. The semiconductor device additionally includes a contact plug passing through the insulating layer so that the contact plug is coupled to a channel structure of the plurality of channel structures.