Semiconductor Contact Structure Layout for Dense Gate and Via Integration
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Solution Overview
Problem
The challenge of forming reliable semiconductor devices at smaller sizes is exacerbated by the complexity of fabrication processes as feature sizes continue to decrease, making it difficult to achieve high production efficiency and reduce costs.
Innovation Solution
A method involving the use of double-patterning or multi-patterning processes to create semiconductor structures with fins and gate all around (GAA) transistors, utilizing sacrificial layers, spacers, and epitaxial growth to form channel structures, followed by the formation of metal gate stacks and conductive contacts, ensuring precise patterning and etching to enhance device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but manufacturing complexity and fabrication difficulty increase
Solution Approach 1:
The fabrication process is divided into multiple discrete stages including forming first and second trenches at different depths, selective epitaxial growth in specific regions, and staged doping processes. This segmentation allows each complex step to be independently optimized and controlled, managing overall process complexity while achieving advanced device structures
Solution Approach 2:
The patent introduces vertical dimensionality by forming trenches at different depths (first trench extending to first depth, second trench extending to second depth greater than first depth) and creating multi-level structures. This vertical segmentation enables complex device architectures to be built through controlled depth variations rather than only lateral patterning, simplifying the overall fabrication approach
2Area of stationary object
If feature sizes continue to decrease to increase functional density, then chip area utilization is improved, but manufacturing precision and reliability become more difficult to achieve
Solution Approach 1:
The patent performs preliminary actions by forming the first trench and performing selective epitaxial growth before forming the second trench. This sequential preparation ensures that each subsequent step builds on a precisely established foundation, maintaining manufacturing precision even as feature sizes decrease and devices become more densely packed
Solution Approach 2:
The patent introduces intermediary structures including dielectric materials filling trenches, sacrificial layers for selective removal, and intermediate doping regions. These intermediary elements serve as placeholders or protective layers that enable precise positioning and formation of final device structures, ensuring manufacturing precision in high-density configurations
3Length of moving object
If double-patterning or multi-patterning processes are used to create smaller features, then feature size is reduced, but process complexity and manufacturing difficulty increase
Solution Approach 1:
The patent segments the patterning process into multiple distinct stages: forming initial mandrels, depositing spacers, selectively removing portions, and repeating the process. This segmentation transforms a single complex multi-patterning operation into manageable sequential steps, reducing manufacturing difficulty while achieving the desired small feature sizes
Solution Approach 2:
The patent performs preliminary patterning actions by forming mandrels and spacers before final device structure formation. These preliminary patterns serve as templates that guide subsequent etching and deposition steps, making the overall multi-patterning process more controllable and easier to manufacture despite the reduced feature sizes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of semiconductor devices with improved performance and reliability by enabling smaller feature sizes while maintaining structural integrity and reducing short-circuiting risks, thereby enhancing operational efficiency and reducing costs.
Implementation Method 1
utilizing sacrificial layers, spacers, and epitaxial growth to form channel structures
Data Source
AI summary
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal gate stack over a substrate and an epitaxial structure over the substrate. The semiconductor device structure also includes a conductive contact electrically connected to the epitaxial structure. A topmost surface of the metal gate stack is vertically disposed between a topmost surface of the conductive contact and a bottommost surface of the conductive contact. The semiconductor device structure further includes a first conductive via electrically connected to the metal gate stack. The topmost surface of the conductive contact is vertically disposed between a topmost surface of the first conductive via and a bottommost surface of the first conductive via. In addition, the semiconductor device structure includes a second conductive via electrically connected to the conductive contact.