Container Capacitor Lattice Support and Anchor Barrier
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Solution Overview
Problem
The formation of double-sided container capacitors in semiconductor devices often results in undesirable shorting between adjacent conductive members due to lateral instability and chemical reagent attacks during processing, which compromises the integrity of the capacitors.
Innovation Solution
A method involving a dielectric lattice layer and a protective anchor material is used to support and anchor the open ends of the conductive members, preventing them from leaning or contacting each other, while a barrier material protects the seams from subsequent processing reagents, ensuring structural integrity and preventing shorting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the relatively thick layer of dielectric material surrounding the first conductive members is removed to form double-sided capacitors, then the capacitance is increased, but the first conductive members become laterally unsupported and may lean together causing shorting
Solution Approach 1:
A lattice layer is formed over the thick dielectric material layer before the dielectric is removed. This lattice layer provides preliminary lateral support to the first conductive members during the subsequent dielectric removal process, preventing them from leaning together and causing shorting while allowing the capacitance-enhancing structure to be formed.
Solution Approach 2:
The lattice layer acts as an intermediary structure between the first conductive members and the environment. It provides the necessary lateral support during processing without interfering with the final capacitor structure, serving as a temporary scaffold that is later removed along with the thick dielectric material.
2Quantity of substance
If openings are formed through the lattice layer to remove dielectric material, then the double-sided capacitor structure is achieved, but reagents may attack the interface between the lattice layer and conductive members causing leaning or collapse
Solution Approach 1:
A protective anchor material is deposited at the interface between the lattice layer and conductive members to protect this vulnerable region from chemical reagent attack during processing. This sacrificial protective layer is later removed along with the lattice layer, having served its purpose of preventing interface degradation during the critical processing steps.
Solution Approach 2:
The protective anchor material is applied beforehand to cushion or protect the vulnerable interface region between the lattice layer and conductive members from harmful chemical reagent attack. This preliminary protection prevents leaning or collapse that would occur without such protective measures in place before the harmful exposure.
3Stability of the object's composition
If the lattice layer is used to support conductive members, then lateral stability is improved, but the interface between the lattice layer and conductive members becomes vulnerable to reagent attack
Solution Approach 1:
A protective anchor material is deposited at the interface between the lattice layer and conductive members to protect this vulnerable region from chemical reagent attack during processing. This sacrificial protective layer is later removed along with the lattice layer, having served its purpose of preventing interface degradation during the critical processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents shorting between adjacent conductive members by providing lateral support and chemical protection, maintaining the structural integrity of the capacitors during processing and enhancing the reliability of semiconductor devices.
Implementation Method 1
the etchant will attack the layer of dielectric material through the holes formed at selected locations in the lattice layer
Implementation Method 2
protective anchor material... protects the seams or interfaces between the upper ends of the first conductive members and the laterally surrounding lattice material from reagents used in subsequent processing steps
Data Source
AI summary
Semiconductor device structures include an at least partially formed container capacitor having a generally cylindrical first conductive member with at least one inner sidewall surface, a lattice material at least partially laterally surrounding an upper end portion of the first conductive member, an anchor material, and at least one aperture extending through the lattice material between the at least partially formed container capacitor and an adjacent at least partially formed container capacitor. Other structures include an at least partially formed container capacitor, a lattice material, and an anchor material disposed over a surface of the lattice material and at least a portion of an end surface of the first conductive member and forming a chemical barrier over at least a portion of an interface between the lattice material and the upper end portion of the first conductive member.


