Semiconductor Process Container Oxidation for Stress Relief
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, the formation of silicon nitride films leads to by-product films on the inner surfaces of processing containers, causing stress and particle generation, which decreases yield and deteriorates equipment, necessitating frequent cleaning that lowers productivity.
Innovation Solution
A method and apparatus for a film formation process using a process container with a quartz or silicon carbide surface, where an oxidizing gas is supplied to convert by-product films into a composition richer in oxygen, reducing stress and preventing particle generation without reducing productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cleaning of the process container is performed frequently to prevent particle generation, then reliability is improved, but productivity deteriorates due to increased downtime
Solution Approach 1:
The patent applies preliminary action by performing a preventive oxidation treatment on the inner surface of the process container after each film formation process. This oxidation process converts silicon nitride by-products into silicon oxide, which has lower stress and prevents peeling. By addressing the potential particle generation issue immediately after film formation rather than waiting for accumulation, the system maintains reliability without requiring frequent full cleaning cycles, thus preserving productivity
2Productivity
If film formation process is continued without cleaning to maintain productivity, then productivity is improved, but harmful factors increase due to stress and peeling of by-product films
Solution Approach 1:
The patent converts the harmful silicon nitride by-products into beneficial silicon oxide through oxidation treatment. The silicon nitride films deposited on the container inner surface generate stress and can peel off as particles, but when exposed to oxygen plasma or oxidizing atmosphere, they transform into silicon oxide which has lower stress and better adhesion. This transformation turns a harmful accumulation into a protective layer, enabling continuous operation without particle generation
3Productivity
If cleaning is delayed to maintain productivity, then productivity is improved, but manufacturing precision deteriorates due to particle generation affecting film quality
Solution Approach 1:
The oxidation treatment is performed as a preliminary maintenance step after each film formation process, preventing the accumulation of harmful by-products before they can affect subsequent film quality. This proactive approach allows the system to maintain manufacturing precision over cumulative film thickness by continuously managing the container surface state without interrupting the overall production flow
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxidation process alleviates film stress and prevents peeling, allowing for continuous film formation without particle generation, thereby maintaining productivity and extending the cumulative film thickness limit before cleaning is required.
Implementation Method 1
supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen
Data Source
AI summary
A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.