Continuous Chamber Liner for Uniform Plasma Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor processing chambers suffer from internal asymmetries due to discontinuous liner components, leading to non-uniform etch rates and other performance issues, such as wafer tunneling effects, and are constrained by large chamber footprints and high material costs.
Innovation Solution
A chamber liner with a continuous, radially-symmetric interior surface that moves between loading and operation positions, providing a symmetric RF return path and allowing for a compact top-pump configuration, which facilitates a more efficient and uniform plasma processing environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional discontinuous liner components are used in processing chambers, then the chamber structure is simpler to manufacture, but internal asymmetries are introduced leading to non-uniform etch rates and wafer tunneling effects
Solution Approach 1:
The liner is divided into multiple segments that can be independently positioned and assembled. This segmentation allows the liner to wrap around internal components like the cathode assembly while maintaining continuous RF return paths, thereby achieving uniform etch rates without excessive structural complexity
Solution Approach 2:
The liner incorporates movable elements that can dynamically adjust their position during chamber operation. This dynamic capability allows the liner to maintain optimal configuration for both substrate processing and RF return path continuity, resolving the contradiction between manufacturing simplicity and processing precision
2Ease of manufacture
If indirect RF feed structures are used, then the chamber design is more conventional and easier to manufacture, but material costs increase and chamber size constraints are imposed
Solution Approach 1:
The RF feed structure is merged with the liner assembly, eliminating the need for separate indirect RF feed components. This integration reduces material usage and cost while maintaining manufacturability through standardized liner components that can be assembled with conventional techniques
Solution Approach 2:
The unnecessary indirect RF feed structures are extracted from the design, leaving only the essential direct RF feed path. This extraction reduces material consumption and simplifies the overall chamber design while maintaining ease of manufacture through streamlined component assembly
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances RF return path symmetry, improves etch rate uniformity, reduces chamber size constraints, and lowers material costs by eliminating indirect RF feed structures and enabling a more compact cathode assembly design.
Implementation Method 1
generating a plasma using the cathode assembly
Implementation Method 2
The chamber liner forms a return path from a cathode assembly to ground in the operation position
Data Source
AI summary
A processing chamber includes a chamber body defining an interior volume and including an access port. A cathode assembly is configured to generate a plasma within the interior volume. A chamber liner includes one or more inner notch structures to engage with one or more components of the chamber body. The chamber liner is configured to move between a loading position and an operation position. When the chamber liner is in the loading position, the interior volume is accessible by the access port. When the chamber liner is in the operation position, the chamber liner at least partially encloses the interior volume.