Continuous Substrate Processing Chamber for ALD Throughput
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Solution Overview
Problem
Current substrate processing systems face challenges in maximizing throughput and minimizing footprint while maintaining high film quality, particularly in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes, where the low deposition rate of ALD techniques increases costs and the quality of films decreases with increased throughput in batch processing systems.
Innovation Solution
A continuous substrate processing chamber design that allows for the concurrent processing of multiple substrates, with each substrate being transferred through multiple processing slots, supported by movable carriers and a gas delivery system, to enhance throughput and maintain high film quality by minimizing chamber footprint and optimizing processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If batch processing is used to increase throughput, then productivity increases, but film quality deteriorates
Solution Approach 1:
The batch processing chamber is segmented into multiple independent processing slots (e.g., 20 slots arranged in a circular pattern), allowing simultaneous processing of multiple substrates in parallel. Each slot operates independently with its own gas delivery system, enabling high throughput while maintaining single-wafer processing quality in each slot.
Solution Approach 2:
The processing chamber is designed as a universal platform that can process multiple substrates simultaneously through multiple slots while maintaining the same processing conditions and film quality as single-wafer systems. The system universally applies the same ALD or CVD process to all substrates in parallel.
2Manufacturing precision
If ALD process is used to improve film quality, then manufacturing precision improves, but processing time increases
Solution Approach 1:
The system enables continuous processing by eliminating idle time between substrates. Multiple substrates are processed simultaneously in parallel slots, and the continuous rotation or movement mechanism ensures that processing action is continuously performed on all substrates without interruption or waiting time.
Solution Approach 2:
The processing time is effectively divided and distributed across multiple parallel slots, allowing the overall throughput to increase while each individual substrate still receives the full ALD treatment required for high film quality.
3Manufacturing precision
If single-wafer processing is used to maintain film quality, then manufacturing precision is maintained, but productivity decreases
Solution Approach 1:
The single-wafer processing chamber is segmented into multiple independent processing slots (e.g., 20 slots), transforming it into a multi-substrate processing system. Each slot maintains the processing quality of a single-wafer system while collectively processing multiple substrates simultaneously, achieving both high film quality and high throughput.
Solution Approach 2:
The system transitions from processing substrates sequentially in a single dimension to processing multiple substrates simultaneously in a multi-dimensional arrangement (circular or linear array of slots), dramatically increasing throughput while maintaining the quality characteristics of single-wafer processing in each slot.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases substrate processing throughput, potentially by 20 times that of single-wafer systems, while maintaining film quality comparable to single-wafer processing systems, by continuously moving substrates through processing slots and optimizing processing environments, thus reducing idle time and pre-treatment/post-treatment delays.
Implementation Method 1
ALD employs chemisorption to deposit a saturated monolayer of reactive precursor molecules on a substrate surface
Implementation Method 2
Each injection of a reactive precursor is typically separated by an inert gas purge to provide a new atomic layer to previous deposited layers to form an uniform material layer on the surface of a substrate
Implementation Method 3
continuously moving the plurality of substrates through each of the plurality of processing slots
Implementation Method 4
chemical vapor deposition (CVD) processes
Data Source
AI summary
Methods of processing a plurality of substrates using a processing chamber with bottom and top openings and a plurality of processing slots are provided. A substrate positioned on a carrier is loaded into a first end of a processing chamber body through the bottom opening. The carrier is moved through a plurality of processing slots to a top opening at a second end of the chamber body and then removed from the processing chamber through the top opening.