Continuous Vertical Via Structure for Dense Component Carriers
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Solution Overview
Problem
Conventional component carriers face challenges in manufacturing reliable and robust electrical interconnections due to tapering vias from laser drilling, which affect signal integrity and require large landing pads, consuming space and being cumbersome to manufacture.
Innovation Solution
A component carrier with a vertical connection structure that continuously extends through multiple insulating layers, formed by a single via with continuous sidewalls, using conductive paste or anisotropic conductive films, or metalized sidewalls filled with insulating material, eliminating the need for multiple stacked blind vias and reducing manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser drilled vias are used to create vertical connections, then electrical interconnections can be formed, but the vias exhibit tapering which degrades signal integrity and requires large landing pads
Solution Approach 1:
The patent replaces the mechanical laser drilling process with a chemical etching process. Instead of using laser energy to physically drill through the substrate, chemical etchants are used to selectively remove material and form vertical vias with uniform walls. This substitution eliminates the inherent tapering problem of laser drilling while maintaining manufacturing feasibility.
Solution Approach 2:
The patent changes the fundamental parameter of via formation from mechanical removal (laser) to chemical removal (etching). This parameter change transforms the via profile from tapered to vertical and uniform, directly addressing the signal integrity issue while reducing the required landing pad area.
2Reliability
If multiple stacked blind vias are used to achieve vertical through-connections, then connection reliability can be improved, but manufacturing complexity and space consumption increase
Solution Approach 1:
The patent merges multiple separate via formation steps into a single chemical etching process. Instead of drilling and filling multiple blind vias sequentially, the chemical etching method creates the complete vertical through-connection in one operation, significantly simplifying the manufacturing process while maintaining connection reliability.
Solution Approach 2:
The patent extracts the intermediate filling and stacking steps from the via formation process. By using chemical etching to directly create continuous vertical pathways, the method removes the need for multiple blind via stacks and their associated filling operations, reducing manufacturing complexity.
3Ease of manufacture
If conventional stacked blind vias with landing pads are used, then electrical connections can be established, but space is consumed and alignment issues arise
Solution Approach 1:
The patent changes the geometric parameter of via walls from tapered to vertical through chemical etching. This parameter change allows for smaller via openings at the surface, reducing landing pad area while maintaining via integrity and improving alignment tolerance due to the uniform vertical profile.
Data Source
Figure 1A~2
Figure 3A~5E
Figure 3F~5I
AI summary
There is described a component carrier (100), comprising a stack (101) having at least one electrically conductive layer structure (104) and a plurality of electrically insulating layer structures (102, 112). The at least one electrically conductive layer structure (104) comprises a vertical connection structure (150) continuously extending vertically through at least two of the plurality of electrically insulating layer structures (102, 112).