Contoured Interconnects for IC Reliability
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Solution Overview
Problem
Conventional integrated circuit (IC) structures experience significant electrical shorting and opens due to seams or voids in high aspect ratio openings, leading to reliability issues.
Innovation Solution
The implementation of contoured interconnects with rounded top surfaces, which increase the spacing between adjacent interconnects, allowing for a larger volume of insulating dielectric and a wider opening for metal deposition, thereby reducing the likelihood of shorts and opens.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional high aspect ratio openings are used for interconnects, then the pitch can be reduced and device density increased, but electrical shorts and opens occur due to seams or voids in the openings
Solution Approach 1:
The patent applies curvature by rounding the top surfaces of interconnects to form contoured shapes. This curvature eliminates sharp corners where seams and voids typically form during metal deposition, thereby preventing electrical shorts and opens while maintaining high device density through reduced pitch
2Productivity
If the spacing between adjacent interconnects is reduced to increase density, then more interconnects can be packed, but the likelihood of electrical shorts increases
Solution Approach 1:
By rounding the top surfaces of interconnects, the patent creates contoured shapes that naturally increase the spacing between adjacent interconnects at their widest points. This curvature-based spacing increase reduces electrical shorting likelihood while allowing higher overall interconnect density through more efficient packing
3Reliability
If the opening size for metal deposition is increased to reduce voids, then the likelihood of opens decreases, but the pitch increases and device density reduces
Solution Approach 1:
The contoured interconnects with rounded top surfaces create wider openings for metal deposition without increasing the overall pitch. The curvature allows the opening to be wider at the top while maintaining compact spacing at the base, thereby reducing electrical opens while preserving high device density
Data Source
AI summary
Integrated circuit (IC) structures include transistor devices with interconnect structures, e.g., a source contact, drain contact, and/or gate contact. The interconnect structures have rounded top surfaces. Contouring the top surfaces of transistor contacts may decrease the likelihood of electrical shorting and may permit a larger volume of insulating dielectric between adjacent contacts.


