Control Electrode Biasing for Reverse-Conducting IGBT Loss Reduction
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Solution Overview
Problem
Reverse-conducting IGBTs face increased conduction loss due to high switching loss of the diode, which is not effectively reduced by existing technologies.
Innovation Solution
A semiconductor device with a control electrode system, including first and second control electrodes insulated from the semiconductor part and electrodes, applying specific control voltages to manage the p-n junction biasing, reducing electron and hole densities to minimize switching and conduction losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If existing technologies are used to reduce diode switching loss, then the conduction loss cannot be effectively reduced
Solution Approach 1:
The patent introduces a control electrode as an intermediary element that mediates between the anode and cathode regions. This control electrode acts as a mediator to independently influence the electric field and carrier distribution, enabling separate optimization of switching and conduction characteristics that existing technologies cannot achieve
Solution Approach 2:
The patent segments the control function by introducing a separate control electrode distinct from the main electrodes. This segmentation allows independent control of the electric field in different regions of the semiconductor device, enabling precise management of both switching and conduction processes without interference
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The control electrode system effectively reduces switching and conduction losses by optimizing the p-n junction biasing, preventing short-circuits and enhancing power conversion efficiency.
Implementation Method 1
applying a first control voltage between the first electrode and the control electrode in a first period, while the p-n junction is biased in a forward direction before the p-n junction becomes biased in a reverse direction; applying a second control voltage between the first electrode and the control electrode in a second period after the first period and before the p-n junction becomes biased in the reverse direction, the second control voltage being greater than the first control voltage
Data Source
AI summary
A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.