Non-volatile Memory Control Plug Floating Gate Integration
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Solution Overview
Problem
Current semiconductor technologies face challenges in improving the integration degree and operation characteristics of embedded memories in System on Chip (SoC) devices, as adding additional processes to the logic process can deteriorate device characteristics.
Innovation Solution
The development of a non-volatile memory device with control plugs formed over an isolation layer, acting as both floating and control gates, which allows for improved integration and operation characteristics without requiring additional processes beyond the logic process, utilizing a floating gate structure with a first charge blocking layer to enhance coupling ratios.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If additional processes are added to the logic process to improve integration degree and operation characteristics of embedded memories, then the integration degree and operation characteristics are improved, but the characteristics of the device including embedded memory deteriorate
Solution Approach 1:
The control plug structure serves multiple functions: it acts as a control gate for the memory device while also being compatible with the logic process fabrication. This multi-functional design allows the same structure to improve memory characteristics without requiring separate additional processes that would harm device reliability.
Solution Approach 2:
The invention merges the memory formation process with the logic process by using the same control plug structure and fabrication steps for both memory and logic circuits. This integration eliminates the need for additional separate processes, thereby improving memory characteristics while maintaining device reliability.
2Ease of operation
If a floating gate structure with control plug is used to improve coupling ratios, then the operation characteristics are improved, but the device complexity increases
Solution Approach 1:
The control plug structure performs dual functions as both a control gate and a structural element that defines the floating gate region. This multi-functionality improves coupling ratios and operation characteristics while avoiding the need for additional separate control gate structures that would increase device complexity.
Solution Approach 2:
The floating gate is formed within the region defined by the control plug structure, creating a nested configuration where the floating gate resides inside the control plug-defined region. This nesting approach improves coupling ratios while maintaining a compact structure that does not significantly increase overall device complexity.
Data Source
AI summary
A non-volatile memory device may include a control plug formed over a substrate. A floating gate may be formed over the substrate, the floating gate surrounding the control plug and being separated from the control plug by a gap. A first charge blocking layer may be formed over sidewalls of the floating gate to fill the gap.