Converter Semiconductor Thermal Load Assessment for Damage Detection
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Solution Overview
Problem
Current methods for assessing the service life of semiconductor assemblies are unreliable due to their inability to accurately account for thermal loads and mechanical stresses, leading to potential premature failure and maintenance challenges, especially under varying operational conditions.
Innovation Solution
A method that determines high-cycle and low-cycle thermal load-time curves for semiconductor components and support structures, using damage characteristic values to identify operating condition ranges and generate indication signals for critical or supercritical states, allowing for ongoing load evaluations and timely interventions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional service life assessment methods are used, then the assessment process is simple, but the reliability of the assessment is poor
Solution Approach 1:
The patent segments the thermal load assessment into two distinct parts: high-cycle thermal loads on the semiconductor component and low-cycle thermal loads on the support structure. Each segment is evaluated separately using appropriate damage characteristic values (LCPC for high-cycle, LCTC for low-cycle), allowing for more accurate and reliable assessment of each component's service life under its specific thermal conditions.
Solution Approach 2:
The patent introduces different damage characteristic values (LCPC and LCTC) to represent different types of thermal loads. By changing the assessment parameters according to the specific thermal load conditions (high-cycle vs low-cycle), the method achieves more accurate and reliable service life predictions while maintaining a systematic approach to complexity management.
2Measurement precision
If thermal load assessment is performed continuously, then the detection precision is high, but the loss of time and computational resources increases
Solution Approach 1:
The patent implements periodic assessment of thermal damage states by continuously monitoring temperature profiles and calculating damage characteristic values at regular intervals. This periodic evaluation maintains high detection precision for thermal damage states while managing computational resources through structured, interval-based assessment rather than continuous calculation.
Solution Approach 2:
The patent uses feedback mechanisms where the calculated damage characteristic values (LCPC and LCTC) are continuously compared against reference values to determine operating condition ranges. This feedback loop enables precise detection of thermal damage states and triggers timely interventions when critical thresholds are approached, optimizing both precision and resource utilization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate assessment of the thermal damage state of semiconductor assemblies, detecting unexpected loads and preventing premature failure by distinguishing between high-cycle and low-cycle thermal loads, thus optimizing maintenance and operational reliability.
Implementation Method 1
During their operation, power dissipation occurs, which leads to a heating of the semiconductor component
Implementation Method 2
which manages the current conduction to the semiconductor component and absorbs and dissipates heat emitted by the semiconductor component
Implementation Method 3
The support structure usually has a base plate which is provided with a heat sink to dissipate the heat present in the support structure
Data Source
AI summary
A method for assessing the state of damage of a semiconductor module that is subject to operational loading, in particular a semiconductor module of a drive system converter, that includes at least one semiconductor component arranged on or in a support structure. It is possible not only to estimate a spent service life for the entire semiconductor module, but also to detect unexpected or undesirable loading states and thus a premature reduction of the remaining service life of the semiconductor module. Continuous load assessments are thus possible already during the operation of the semiconductor module and allow interventions to be made in good time.