Convex Contact Surface for Semiconductor Memory Device Integration
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Solution Overview
Problem
Stability in operation of stacked type semiconductor memory devices is compromised due to structural shrinkage, requiring innovative configurations to maintain effective contact surfaces and electrical conductivity.
Innovation Solution
A semiconductor memory device design featuring a convex downward contact surface between the epitaxial silicon member and the silicon pillar, utilizing a combination of epitaxial silicon growth, etching techniques, and insulating films to enhance surface area and conductivity, even at reduced dimensions for higher integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the structure shrinks to achieve higher integration, then device density increases, but contact surface area decreases and electrical resistance increases
Solution Approach 1:
The contact surface between the first semiconductor member and the second semiconductor member is configured to be convex downward, transforming a flat contact interface into a curved surface. This curvature increases the contact surface area between the two semiconductor members, thereby maintaining electrical conductivity even as the overall device structure shrinks for higher integration density.
Solution Approach 2:
The invention transitions from a two-dimensional planar contact surface to a three-dimensional convex surface. By adding vertical dimensionality to the contact interface, the effective contact area is expanded without increasing the horizontal footprint, enabling maintained electrical performance in a shrunk device structure.
2Productivity
If the structure shrinks to achieve higher integration, then device density increases, but electrical conductivity deteriorates
Solution Approach 1:
The convex downward configuration of the contact surface increases the contact area between semiconductor members, directly improving electrical conductivity by providing more pathways for current flow, thereby maintaining reliability in shrunk device structures.
Solution Approach 2:
The invention changes the geometric parameters of the contact surface from flat to convex, thereby altering the electrical resistance parameter. This parameter change ensures that electrical conductivity is maintained even when the overall device dimensions are reduced for higher integration.
3Reliability
If the contact surface area is increased to maintain conductivity, then electrical resistance decreases, but device complexity increases
Solution Approach 1:
The convex downward contact surface is formed through epitaxial growth processes, which naturally create curved surfaces. This approach increases contact area and improves conductivity while avoiding the need for complex multi-layer or multi-component structures, thereby maintaining relatively simple device architecture.
Solution Approach 2:
The convex contact surface is formed through self-organizing epitaxial growth processes where the semiconductor material naturally forms the desired curved geometry during crystal growth. This self-organizing behavior creates the complex surface geometry without requiring additional complex manufacturing steps or structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The convex downward contact surface increases the contact area, reducing electrical resistance and ensuring stable operation by maintaining low conductivity and securing cell current, thereby improving the stability of the semiconductor device.
Implementation Method 1
an epitaxial silicon member 21 is formed by performing epitaxial growth of silicon on an upper surface 10a of the silicon substrate 10
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a stacked body provided on the semiconductor substrate and including a plurality of electrode films being disposed to be separated from each other along a vertical direction, a first semiconductor member provided inside the stacked body and contacting the semiconductor substrate, a second semiconductor member provided on the first semiconductor member inside the stacked body, contacting the first semiconductor member and extending in the vertical direction, and an insulating film provided between the second semiconductor member and the electrode films. A configuration of a contact surface between the first semiconductor member and the second semiconductor member is convex downward.