Convex Source/Drain Contact Geometry for Multi-Gate Scaling
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing density and improving electrical stability while reducing capacitance and scaling multi-gate transistors effectively.
Innovation Solution
The semiconductor device incorporates a gate structure with a gate electrode and capping pattern, source/drain patterns, and contacts featuring convex or concave curved surfaces to enhance element performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors are scaled down to increase density, then device density increases, but electrical stability and capacitance control become more difficult
Solution Approach 1:
The source/drain contact is designed with a convex curved upper surface instead of a flat surface. This curvature increases the contact area with the overlying conductive pattern, improving electrical connection stability and reducing capacitance variation when scaling down device dimensions. The curved surface allows better adaptation to the contact interface, maintaining electrical stability at smaller scales.
2Length of moving object
If gate length is not increased, then device scaling is maintained, but current control capability deteriorates
Solution Approach 1:
The source/drain contact extends along the sidewall of the gate electrode in the vertical dimension, creating a three-dimensional contact structure. This sidewall extension increases the effective contact area and improves current control capability without increasing the horizontal gate length, allowing continued device scaling while maintaining electrical performance.
3Reliability
If source/drain contact area is increased to improve connection, then electrical stability improves, but device pitch size increases
Solution Approach 1:
The source/drain contact utilizes the vertical dimension by extending along the gate electrode sidewall and forming a convex upper surface. This three-dimensional structure increases the effective contact area for improved electrical stability without expanding the horizontal pitch size, enabling better electrical connection within the same device footprint.
4Reliability
If convex curved surface is formed on source/drain contact, then contact area and electrical stability improve, but manufacturing complexity increases
Solution Approach 1:
The convex curved surface on the source/drain contact is formed through standard semiconductor manufacturing processes such as anisotropic etching or selective deposition. These are conventional techniques already used in the industry, so while the geometry is more complex, the manufacturing process complexity is managed by using established fabrication methods rather than requiring new process technologies.
Data Source
AI summary
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device includes comprising a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode; a source/drain pattern on at least one side of the gate structure; and a source/drain contact on and connected with an upper surface of the source/drain pattern, the source/drain contact extending along a sidewall of the gate electrode, wherein an upper surface of the source/drain contact includes a convex curved surface.