Cooling Head Fin Structure to Eliminate TIM Air Gaps
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Solution Overview
Problem
Existing semiconductor testing handlers face inefficiencies in temperature control due to air gaps forming at the interface between the fin structure and thermal interface material, leading to mechanical defects such as warpage and cracking during high-performance computing tests.
Innovation Solution
The implementation of a fin structure with recesses and protrusions that reduce the likelihood of air gaps by increasing contact area and thermal conductivity, enhancing temperature control accuracy and preventing mechanical defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a fin structure is used for temperature control in semiconductor testing, then temperature control capability is improved, but air gaps form at the interface with thermal interface material causing mechanical defects
Solution Approach 1:
The fin structure is pre-formed with recesses at its base before assembly. These recesses are designed to receive and conform to protrusions on the thermal interface material, ensuring that the thermal interface material fully fills the recesses and eliminates air gaps before the assembly undergoes temperature cycling during semiconductor testing.
Solution Approach 2:
The fin structure incorporates localized recesses at specific locations where air gaps are most likely to form at the interface with the thermal interface material. This localized modification concentrates the air gap elimination effort where it is most needed, improving thermal contact quality without requiring a complete redesign of the entire fin structure.
2Temperature
If thermal interface material is applied to fill gaps, then thermal contact is improved, but application complexity and potential for defects increase
Solution Approach 1:
The recesses in the fin structure are designed with specific dimensional parameters (depth, width, shape) that are optimized to match the properties of the thermal interface material. The recesses are sized to ensure complete filling by the thermal interface material while maintaining ease of assembly and reducing the risk of application defects.
3Manufacturing precision
If air gaps are present at the interface, then manufacturing is simpler, but temperature control accuracy deteriorates leading to mechanical defects
Solution Approach 1:
The base of the fin structure is segmented into multiple recesses rather than being a flat surface. This segmentation creates multiple localized zones for thermal interface material placement, ensuring complete contact between the fin structure and the semiconductor device across the entire interface area, thereby improving temperature control accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improved temperature control efficiency reduces the risk of mechanical defects in semiconductor devices, ensuring precise and accurate testing results while minimizing costs.
Implementation Method 1
a coolant chamber configured to receive coolant and flow the coolant through the coolant chamber to cool the fin structure
Implementation Method 2
a first thermal interface material between the coolant chamber and the fin structure; a second thermal interface material between the heater pad and the fin structure
Implementation Method 3
a heater pad coupled to the first thermal interface material
Data Source
AI summary
A final test (FT) handler including a fin structure. The fin structure includes a first side and a second side opposite to the first side. A plurality of protrusions of the fin structure are at the first side and are defined or delimited by a plurality of recesses that extend into the first side of the fin structures. The plurality of protrusions are inserted into a TIM layer of the FT handler and the plurality of recesses are filled by the TIM layer. The plurality of protrusion and plurality of recesses increase a contact area between the TIM layer and the fin structure. The FT handler is configured to, in operation, pick up, hold onto, and transport one or more semiconductor devices to be tested, for example, with a high-performance computing (HPC) test for quality assurance and control purposes.


