Cooling Station Temperature Control for Semiconductor Substrates
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Solution Overview
Problem
Conventional semiconductor substrate processing systems experience defects due to vapor condensation on substrates when transitioning from a curing chamber to a cooling station, where the lower temperature in the cooling station causes condensed vapor to deposit on the substrate surfaces, increasing defect rates with idle time.
Innovation Solution
A novel cooling station is designed to maintain a predetermined temperature higher than room temperature, often close to the curing chamber temperature, to prevent vapor condensation, featuring a housing with heating elements, a shelter plate for passive heating, and an airflow structure for controlled air circulation to manage substrate temperature during transfer and storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the cooling station operates at room temperature to cool substrates, then the cooling function is provided, but vapor condensation occurs on the substrate surfaces causing defects
Solution Approach 1:
The patent changes the temperature parameter of the cooling station from conventional room temperature (20-25°C) to a higher temperature range (30-50°C). This parameter change prevents vapor condensation on substrate surfaces while still providing effective cooling after the curing process, thereby eliminating defects without sacrificing the cooling function.
2Object-affected harmful factors
If the cooling station temperature is increased to prevent condensation, then vapor condensation is reduced, but the cooling effectiveness may be compromised
Solution Approach 1:
The patent implements local quality by providing temperature-controlled zones within the cooling station. Different regions of the station can operate at different temperatures to optimize both condensation prevention and cooling effectiveness for substrates at various stages of the cooling process.
Solution Approach 2:
The cooling station employs dynamic temperature control where the temperature can be adjusted based on the substrate's thermal state and the condensation risk. This allows the system to adaptively balance between preventing condensation and maintaining cooling effectiveness throughout the substrate processing cycle.
3Loss of time
If substrates are transferred quickly from curing chamber to cooling station, then idle time is reduced, but temperature fluctuations may cause condensation
Solution Approach 1:
The patent applies preliminary action by pre-heating the cooling station to a higher temperature before substrate arrival. This preparatory measure ensures that when substrates are quickly transferred from the curing chamber, the cooling station environment is already optimized to prevent condensation, allowing fast transfer without condensation defects.
Solution Approach 2:
The cooling station acts as an intermediary zone with controlled temperature between the curing chamber and the ambient environment. This intermediate temperature zone buffers the substrate during transfer, preventing direct exposure to temperature differentials that would cause condensation while enabling rapid throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces or eliminates defects associated with vapor condensation, maintaining substrate quality by maintaining a consistent temperature environment from the curing to the cooling phase, thereby minimizing idle time-related defects.
Implementation Method 1
the lower temperature in the cooling station causes condensed vapor to deposit on the substrate surfaces
Implementation Method 2
A novel cooling station is designed to maintain a predetermined temperature higher than room temperature, often close to the curing chamber temperature, to prevent vapor condensation
Implementation Method 3
an airflow structure for controlled air circulation to manage substrate temperature during transfer and storage
Data Source
AI summary
An apparatus for semiconductor processing is provided. The apparatus includes a housing comprising a plurality of shelves configured to receive a plurality of substrates; a shelter plate disposed over an upper side of the housing and configured to reduce heat loss of an upper substrate of the plurality of substrates; and an airflow structure in the housing and configured to control an air circulation in the housing.


