Cooling Substrate Structure for Semiconductor Heat Dissipation
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor devices lead to excessive heating, which affects device performance, bonding integrity, and reliability due to thermal stresses and material expansion differences, resulting in premature failure.
Innovation Solution
A substrate structure with improved heat dissipation is implemented, featuring a cooling substrate layer made of high-thermal-conductivity materials like copper or silicon carbide, and a multi-layer structure to support the wafer during manufacturing, enhancing thermal dissipation and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized and functional density is increased, then production efficiency is improved and costs are lowered, but heat generation increases and device reliability deteriorates
Solution Approach 1:
The patent extracts the heat dissipation function from the conventional substrate and implements it as a separate, dedicated cooling substrate layer. This cooling layer is selectively positioned beneath high-power density regions to efficiently extract heat away from active devices, thereby maintaining reliability while preserving the miniaturization benefits for productivity.
Solution Approach 2:
The patent applies local quality by creating non-uniform thermal management across the substrate. The cooling substrate layer is strategically placed only in regions with high power dissipation, while other areas maintain the original substrate structure. This localized approach optimizes heat removal where needed without compromising the overall device performance and reliability.
2Area of moving object
If geometry size is decreased to increase functional density, then more devices fit per chip area, but thermal stresses and material expansion differences cause bonding integrity to deteriorate
Solution Approach 1:
The patent changes the thermal parameter (thermal conductivity) of the substrate by introducing a cooling substrate layer with superior thermal conductive materials. This parameter change enables effective heat removal, reducing thermal gradients and expansion differences that cause bonding failures, thereby maintaining bonding integrity despite increased device density.
3Ease of operation
If current flows through impedance components, then device functionality is achieved, but energy losses manifest as heat that affects device performance
Solution Approach 1:
The patent converts the harmful heat energy into a manageable thermal flow by implementing a cooling substrate layer that directs heat away from sensitive active devices. The heat generated by current flow through impedance components is channeled through the high thermal conductivity cooling layer to designated heat sink regions, transforming a harmful effect into a controlled thermal management solution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces heat generation by 6.5% to 18% and increases wafer integrity, preventing premature failure and improving device reliability by efficiently dissipating heat through both in-plane and out-of-plane directions.
Implementation Method 1
the cooling substrate layer has a thermal conductivity substantially greater than a thermal conductivity of the substrate... efficiently dissipating heat through both in-plane and out-of-plane directions
Data Source
AI summary
A semiconductor device structure and methods of forming the same are described. In some embodiments, the method includes depositing an etch stop layer on a substrate, depositing a first substrate layer on the etch stop layer, forming a plurality of active devices on the first substrate layer, forming an interconnection structure over the active devices, flipping over the substrate, removing the substrate, removing the etch stop layer to expose the first substrate layer, and forming a cooling substrate layer on the exposed first substrate layer. The cooling substrate layer has a thermal conductivity substantially greater than a thermal conductivity of the substrate.