Coplanar Double Gate Oxide TFT for Display Stability
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Solution Overview
Problem
The stability of oxide thin film transistors in display technology is insufficient for mass production, affecting device performance and response speed, which limits their competitiveness in next-generation display technologies.
Innovation Solution
A coplanar double gate electrode oxide thin film transistor structure is developed, featuring a recessed substrate with a coplanar bottom gate electrode and a top gate electrode, along with plasma-treated source and drain contact areas, and a planar gate insulating layer to enhance stability and reduce intrinsic capacitance, thereby improving response speed and reducing production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If oxide thin film transistor is used to increase carrier mobility and response speed, then the charging and discharging rate of TFT to pixel electrode is greatly increased, but the stability of the device is insufficient for mass production
Solution Approach 1:
The transistor is divided into multiple gate electrodes (first gate electrode and second gate electrode) positioned at different locations. This segmentation allows independent control and optimization of different regions, improving both response speed through faster charging/discharging and stability through distributed electrical field management that prevents localized breakdown
Solution Approach 2:
The patent transitions from a conventional single-plane gate structure to a three-dimensional arrangement with gate electrodes at different heights and positions (bottom gate and top gate). This dimensional change enables better electrical field distribution and control over the semiconductor layer, simultaneously achieving faster response and improved stability
2Device complexity
If conventional single gate electrode structure is used, then the device structure is simple, but the response speed is limited and cannot achieve ultra-high resolution in TFT-LCD
Solution Approach 1:
The single gate electrode is segmented into multiple gate electrodes (first gate electrode connected to first signal line, second gate electrode connected to second signal line). This segmentation enables independent control of different gate regions, significantly increasing the charging and discharging rate and response speed while maintaining a relatively simple overall structure that is still manufacturable
Solution Approach 2:
The multiple gate electrodes serve multiple functions: they collectively control the transistor channel, provide independent signal paths for different pixel operations, and can be selectively activated based on display requirements. This multi-functionality achieves ultra-high resolution and fast response without proportionally increasing structural complexity
3Productivity
If oxide thin film transistor technology is adopted for next-generation display, then carrier mobility is 20 to 30 times that of amorphous silicon, but the line scan rate increases making ultra-high resolution possible while stability remains insufficient
Solution Approach 1:
The transistor structure is segmented into multiple independently controllable gate electrodes that can be driven by different signal lines. This enables higher line scan rates by allowing parallel or sequential control of different pixel rows or columns, while the distributed gate structure improves stability by preventing localized electrical breakdown that would occur in single-gate configurations
Solution Approach 2:
The patent changes the electrical parameters of the transistor by introducing multiple gate electrodes with different potentials and control signals. This allows optimization of the electrical field distribution to achieve both high line scan rates for ultra-high resolution displays and improved device stability through controlled electrical characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The coplanar double gate electrode structure enhances the electrical stability and response speed of oxide thin film transistors, reduces power consumption, and lowers the driving voltage by minimizing RC delay and gate insulating layer breakdown issues, making the technology more viable for high-resolution displays.
Implementation Method 1
the source electrode contact area and the drain electrode contact area are formed by plasma treating to the oxide semiconductor layer
Data Source
AI summary
The present disclosure relates to a coplanar double gate electrode oxide thin film transistor, includes a substrate, a bottom gate electrode, a first gate electrode insulating layer, a oxide semiconductor layer, a source electrode contact area and a drain electrode contact area, a second gate electrode insulating layer and a top gate electrode, wherein, the upper surface of the substrate is recessed toward the inside of the substrate to form a groove, the bottom gate electrode is formed in the groove, so that the upper surface of the bottom gate electrode and the upper surface of the substrate are in the same horizontal plane. The thin film transistor of the present disclosure has the characteristics of the double gate electrode and the coplanar structure, and is capable of improving the stability of the thin film transistor, optimizing the response speed thereof, and lowering the driving voltage.