Coplanar Electrode Pad and Insulation Layer in Semiconductor Light Emitting Structure
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Solution Overview
Problem
Conventional methods for manufacturing thin-film flip-chip light emitting diodes often result in epitaxial structure cracking due to stress during substrate removal, leading to reduced yield rates and increased manufacturing costs.
Innovation Solution
A semiconductor light emitting structure is designed with an epitaxial structure, N-type and P-type electrode pads, and an insulation layer where the upper surfaces of the P-type electrode pad and insulation layer are coplanar, and optionally the N-type electrode pad, to strengthen the epitaxial structure and prevent cracking during substrate removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the substrate is removed by laser removing process, then the thin-film flip-chip light emitting diode is formed, but the epitaxial structure may crack due to stresses
Solution Approach 1:
The patent applies preliminary action by forming a stress compensation layer and adjusting the structure before substrate removal. The coplanar configuration of electrode pads and insulation layers is established in advance to prevent stress-induced cracking during the subsequent laser removing process, thereby maintaining structural integrity and improving yield rate.
2Shape
If the epitaxial structure is made thin for flip-chip configuration, then the device structure is improved, but the epitaxial structure becomes vulnerable to cracking
Solution Approach 1:
The patent employs composite materials by integrating the epitaxial structure with electrode pads, insulation layers, and stress compensation layers. This composite structure provides mechanical support and stress distribution, enabling the thin epitaxial layer to maintain structural strength while achieving the desired flip-chip configuration.
Solution Approach 2:
The patent applies local quality by creating a coplanar configuration specifically at the electrode pad and insulation layer regions. This localized structural optimization provides enhanced stress resistance at critical areas where cracking is most likely to occur, while maintaining the overall thin-film structure necessary for flip-chip design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents epitaxial structure cracking during substrate removal, enhancing the structural integrity and reducing manufacturing costs by ensuring the upper surfaces of the P-type electrode pad, insulation layer, and N-type electrode pad are coplanar, thereby solidifying the semiconductor light emitting structure.
Implementation Method 1
the substrate is removed by a laser removing process
Data Source
AI summary
A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.