Coplanar Semiconductor Line With Resistive Film for Substrate Resonance
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Solution Overview
Problem
Substrate propagation in high-speed semiconductor devices causes unstable operation and increased loss in the sub-terahertz band, particularly due to resonance and heat dissipation issues.
Innovation Solution
A coplanar type line configuration with a resistive film formed between the semiconductor substrate and ground metal, insulated from each other, to absorb electromagnetic waves and reduce substrate propagation, while maintaining characteristic impedance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a coplanar type line is used for high-speed communication in the sub-terahertz band, then transmission rate can exceed 100 Gbps, but substrate propagation causes resonance and unstable operation
Solution Approach 1:
A resistive film is introduced as an intermediary layer between the ground metal and the semiconductor substrate. This resistive film absorbs electromagnetic energy that would otherwise propagate through the substrate, preventing resonance and stabilizing amplifier operation while maintaining high-speed transmission capabilities
Solution Approach 2:
The resistive film converts harmful electromagnetic propagation and resonance effects into beneficial heat energy through resistance. By absorbing the electromagnetic energy that causes unstable operation, the resistive film transforms the problematic substrate propagation into a controlled energy dissipation mechanism
2Reliability
If substrate thickness is increased to reduce resonance, then operational stability improves, but heat dissipation becomes more difficult
Solution Approach 1:
The resistive film is selectively positioned only in specific regions where electromagnetic propagation occurs, rather than uniformly across the entire substrate. This localized approach stabilizes operation in critical areas while preserving heat dissipation pathways in other regions, and the ground metal remains insulated from the resistive film to maintain electrical performance
3Speed
If power added efficiency is low in the sub-terahertz band, then transmission performance is maintained, but heat generation increases significantly
Solution Approach 1:
The resistive film extracts and removes electromagnetic energy from the substrate propagation path. By taking out the excess energy that would otherwise be converted into heat through inefficient power amplification, the resistive film reduces overall heat generation while preserving the high-speed transmission performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces discontinuous behavior and improves heat dissipation characteristics, stabilizing operation and reducing loss in the sub-terahertz region.
Implementation Method 1
a first resistive film formed between a surface of the semiconductor substrate and the ground metal or between a surface of the semiconductor substrate and a region where there is no metal over the semiconductor substrate, wherein the ground metal and the first resistive film are insulated from each other
Data Source
AI summary
A semiconductor device including: a semiconductor substrate; a coplanar type line that includes a signal line and a ground metal formed on a surface side of the semiconductor substrate; and a first resistive film formed between a surface of the semiconductor substrate and the ground metal or between a surface of the semiconductor substrate and a region where there is no metal over the semiconductor substrate, wherein the ground metal and the first resistive film are insulated from each other.