3D Coplanar Waveguide Stacked Multi-Chip Energy Loss
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Solution Overview
Problem
The miniaturization of integrated circuit devices affects the signal-carrying effectiveness of coplanar waveguides, leading to increased energy loss and limitations in high-frequency signal transmission in traditional 2D chip structures.
Innovation Solution
A method of forming a composite coplanar waveguide by directly connecting two coplanar waveguides from separate chips using micro-C4 solder balls or copper pillars, creating a 3D structure with thicker signal and ground lines that reduce energy loss and enhance high-frequency signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of coplanar waveguide lines is decreased to miniaturize integrated circuits, then the overall device size is reduced, but the signal-carrying effectiveness deteriorates and energy loss increases
Solution Approach 1:
The patent transitions from traditional 2D coplanar waveguide structures to 3D stacked configurations. Multiple coplanar waveguide layers are stacked vertically and interconnected through through-silicon-vias (TSVs), creating a three-dimensional transmission line structure. This dimensional change allows signal lines to maintain larger effective cross-sectional areas while reducing the overall footprint area, thereby minimizing energy loss during miniaturization.
Solution Approach 2:
The patent combines multiple coplanar waveguide structures from different chip layers into a unified 3D transmission line system. By stacking and interconnecting waveguide layers through TSVs, the patent merges separate signal paths into a cohesive multi-layer structure that maintains signal integrity and reduces energy loss while achieving compact form factor.
2Volume of moving object
If the size of coplanar waveguide lines is decreased to miniaturize integrated circuits, then the overall device size is reduced, but the signal-carrying effectiveness deteriorates
Solution Approach 1:
The patent transitions from traditional 2D coplanar waveguide structures to 3D stacked configurations. Multiple coplanar waveguide layers are stacked vertically and interconnected through through-silicon-vias (TSVs), creating a three-dimensional transmission line structure. This dimensional change allows signal lines to maintain larger effective cross-sectional areas while reducing the overall footprint area, thereby minimizing energy loss during miniaturization.
Solution Approach 2:
The patent combines multiple coplanar waveguide structures from different chip layers into a unified 3D transmission line system. By stacking and interconnecting waveguide layers through TSVs, the patent merges separate signal paths into a cohesive multi-layer structure that maintains signal integrity and reduces energy loss while achieving compact form factor.
3Ease of manufacture
If traditional 2D chip structures are used, then manufacturing is simpler, but high-frequency signal transmission is limited
Solution Approach 1:
The patent transitions from traditional 2D coplanar waveguide structures to 3D stacked configurations. Multiple coplanar waveguide layers are stacked vertically and interconnected through through-silicon-vias (TSVs), creating a three-dimensional transmission line structure. This dimensional change allows signal lines to maintain larger effective cross-sectional areas while reducing the overall footprint area, thereby minimizing energy loss during miniaturization.
Solution Approach 2:
The patent modifies key structural parameters of coplanar waveguides by stacking multiple layers with controlled impedances and characteristic dimensions. By adjusting the geometry, spacing, and material properties of the stacked waveguide layers, the patent optimizes signal transmission characteristics for high-frequency applications while maintaining manufacturing feasibility through standard semiconductor processes.
Data Source
AI summary
An approach for a coplanar waveguide structure in stacked multi-chip systems is provided. A method of manufacturing a semiconductor structure includes forming a first coplanar waveguide in a first chip. The method also includes forming a second coplanar waveguide in a second chip. The method further includes directly connecting the first coplanar waveguide to the second coplanar waveguide using a plurality of chip-to-chip connections.