Copper Columnar Crystal Grain Orientation in Semiconductor Package Redistribution
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Solution Overview
Problem
The reliability of electrical performance within semiconductor packages, particularly in redistribution circuit structures, is a challenge due to limitations in existing manufacturing methods for wafer-level packaging and integration of semiconductor dies, which affect the stability and efficiency of the package structure.
Innovation Solution
A manufacturing method involving a carrier with a debond layer and buffer layer, where semiconductor dies are stacked and encapsulated with a redistribution circuit structure formed through a series of layers including metallization and dielectric layers, with copper crystal grains oriented on specific lattice planes for improved thermal stability and mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing methods are used for wafer-level packaging and integration, then production efficiency is maintained, but the reliability and thermal stability of the redistribution circuit structure deteriorates
Solution Approach 1:
The patent applies parameter changes by controlling the crystal grain orientation of copper conductors through specific lattice plane alignment ((111), (200), or (220) planes). This orientation control fundamentally changes the thermal and mechanical properties of the conductor, improving reliability without requiring complex manufacturing process changes. The crystal grain size is also controlled to be 1 μm or less, further enhancing thermal stability.
Solution Approach 2:
The patent employs composite material structures by combining copper conductors with specific crystal grain orientations with dielectric layers and seed layers. This composite approach creates a redistribution circuit structure where each material layer contributes specific properties: the oriented copper provides thermal stability and electrical conductivity, while the dielectric layers provide insulation and structural support.
2Temperature
If copper conductors with random crystal grain orientation are used, then manufacturing is simpler, but thermal stability and mechanical properties deteriorate
Solution Approach 1:
The patent transforms the random crystal grain orientation parameter into a controlled parameter by specifying target lattice planes ((111), (200), or (220)) for orientation. This parameter change from random to oriented structure directly improves thermal stability while the manufacturing process uses conventional electroplating techniques, avoiding excessive complexity.
Solution Approach 2:
The patent replaces mechanical control methods with electromagnetic field-based control during electroplating. By applying specific electrical parameters and plating conditions, the crystal grain orientation is controlled through electromagnetic interactions rather than mechanical means, achieving precise orientation control with standard manufacturing equipment.
3Productivity
If conventional electroplating is used without crystal grain control, then manufacturing is easier, but electromagnetic behavior and signal integrity worsen
Solution Approach 1:
The patent changes the electromagnetic behavior by controlling the crystal grain orientation of copper conductors. The oriented lattice structures reduce signal loss and improve electromagnetic performance while maintaining conventional electroplating manufacturing processes, thus preserving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the reliability and efficiency of semiconductor package structures by improving the thermal stability, mechanical properties, and electromagnetic behavior, leading to better performance and yield in 3D packaging.
Implementation Method 1
copper crystal grains oriented on specific lattice planes for improved thermal stability and mechanical properties
Data Source
AI summary
A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.