Copper Conductive Layer Oxide Deposition for Display Substrates
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Solution Overview
Problem
Copper conductive layers in display substrates are prone to oxidation when exposed to oxygen-containing insulating layers, leading to adverse effects on electrical performance and adhesion issues, particularly in thin film transistor (TFT) applications.
Innovation Solution
A method involving chemical vapor deposition to form a silicon oxide layer on copper conductive layers using a mixture of oxygen and silicon-containing gases at controlled temperatures and pressures, with optional pre-heating and plasma cleaning, to prevent oxidation and enhance adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an oxygen-containing insulating layer is deposited on a copper conductive layer, then the insulating function is improved, but the copper layer oxidizes leading to adhesion issues and electrical performance degradation
Solution Approach 1:
A nitrogen-containing protective layer is introduced as an intermediary between the copper conductive layer and the oxygen-containing insulating layer. This protective layer acts as a barrier that prevents oxygen from reaching and oxidizing the copper surface during the deposition process, while still allowing the insulating layer to be deposited on top of it. The protective layer thus mediates the interaction between the copper layer and the insulating layer, eliminating the harmful oxidation effect.
Solution Approach 2:
The nitrogen-containing protective layer is formed on the copper surface before the oxygen-containing insulating layer is deposited. This preliminary action protects the copper surface in advance from oxidation, ensuring that when the insulating layer is subsequently deposited, the copper layer remains free from oxidation and maintains its electrical performance and adhesion properties.
2Reliability
If copper is used as the conductive layer material, then the electrical conductivity is improved, but the adhesion between the copper layer and the oxide layer deteriorates due to oxidation
Solution Approach 1:
The nitrogen-containing protective layer serves as a mediator that prevents direct contact between oxygen and the copper surface. By blocking oxygen access, it prevents the formation of copper oxide at the interface, thereby maintaining strong adhesion between the copper layer and the subsequently deposited insulating layer, while preserving the copper's electrical conductivity.
Solution Approach 2:
The protective layer creates an inert environment around the copper surface, preventing oxidation by excluding oxygen. This inert barrier allows the copper layer to maintain its metallic properties including electrical conductivity and adhesion, while still enabling the deposition of the insulating layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents copper oxidation, improving electrical performance and adhesion between the copper layer and the oxide layer, thus expanding the application scope of copper-based conductive layers in display substrates.
Implementation Method 1
performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate
Implementation Method 2
cleaning the exposed surface of the conductive layer using a protective plasma
Data Source
AI summary
A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.