Copper Electrode Semiconductor Device Cost Reduction
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Solution Overview
Problem
Conventional semiconductor devices using gold electrodes are costly and require downsizing, resource optimization, easier manufacturing, improved workability, and accurate manufacturing processes.
Innovation Solution
A semiconductor device structure comprising a titanium layer, an aluminum layer, a titanium nitride layer, and a copper electrode layer, with optional additional titanium layers, where the titanium nitride layer has a thickness of at least 200 nm or greater than 75 nm, reducing material costs and enabling good ohmic contact and adhesiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gold is used for the electrode, then good electrical contact and reliability are achieved, but manufacturing cost increases significantly
Solution Approach 1:
The patent employs a composite electrode structure consisting of multiple layers (titanium layer, aluminum layer, titanium nitride layer, and copper electrode layer) that work together to achieve both reliable electrical contact and cost reduction. The titanium nitride layer specifically provides good adhesion and electrical contact properties, while the copper layer reduces cost compared to pure gold electrodes.
Solution Approach 2:
The patent specifies a minimum thickness of 200 nm for the titanium nitride layer to ensure adequate electrical contact and adhesion properties. This parameter optimization allows the use of less expensive materials while maintaining reliable electrical performance, directly addressing the cost-reliability tradeoff.
2Reliability
If the titanium nitride layer thickness is increased, then adhesion and electrical contact are improved, but manufacturing complexity and process control difficulty increase
Solution Approach 1:
The patent establishes a specific minimum thickness parameter of 200 nm for the titanium nitride layer, which optimizes the balance between achieving sufficient adhesion and electrical contact while avoiding excessive complexity. This quantified parameter provides clear manufacturing guidance without over-complicating the process.
Data Source
AI summary
An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of copper.