Copper Etchant Composition for Stable Multi-Layer Wiring
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Solution Overview
Problem
Conventional etchants for metal wiring in display devices, particularly those using copper layers, face instability and rapid decomposition due to high metal ion concentrations, leading to heat generation and composition changes, which affect the etching process and stability.
Innovation Solution
An etchant composition with hydrogen peroxide at 5-15 wt%, an oxidant at 0.5-5 wt%, a fluoride-based compound at 0.1-1 wt%, a nitrate-based compound at 0.5-5 wt%, and a boron-based compound at 0.05-1 wt%, along with a chelating agent and additive, is used to stabilize the etching process and improve etching speed and stability for copper, titanium, and molybdenum layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a peroxide-based etchant includes metal ions at high concentration, then etching speed is improved, but peroxide decomposition is accelerated causing heat generation and composition change
Solution Approach 1:
The patent optimizes the concentration parameters of multiple components: hydrogen peroxide (5-15 wt%), oxidant (0.5-5 wt%), fluoride-based compound (0.1-1 wt%), nitrate-based compound (0.5-5 wt%), and boron-based compound (0.05-1 wt%). This balanced parameter configuration achieves effective etching speed while preventing excessive peroxide decomposition and maintaining etchant stability throughout the etching process.
2Power
If peroxide decomposition is accelerated, then etching capability is enhanced, but heat generation and quick composition change occur
Solution Approach 1:
The patent introduces oxidants, fluoride-based compounds, nitrate-based compounds, and boron-based compounds as intermediary substances that mediate the etching reaction. These intermediaries enable effective copper etching through controlled chemical reactions while preventing direct rapid decomposition of hydrogen peroxide, thereby suppressing heat generation and maintaining composition stability.
3Productivity
If etching speed is increased, then productivity is improved, but etching loss and taper angle control become difficult
Solution Approach 1:
The patent employs a multi-component chemical system with optimized concentrations that provides controlled and uniform etching kinetics. The combination of hydrogen peroxide with oxidants, fluoride-based compounds, nitrate-based compounds, and boron-based compounds creates a balanced etching environment that achieves high productivity while maintaining precise control over etching loss and taper angle, producing clean vertical profiles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etchant composition achieves stable and efficient etching of multi-layer metal wiring with controlled etching loss and taper angle, suppressing thermal reactions and maintaining process stability, thereby enhancing treatment capacity and pattern formation.
Implementation Method 1
hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %
Implementation Method 2
suppressing thermal reactions and maintaining process stability
Data Source
AI summary
The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.