Copper Etching Composition for Semiconductor Fuse Line Repair
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices face challenges in reducing defects at the cut fuse line during the laser repair process, particularly due to copper residue and oxide remaining after cutting, which can cause electrical connectivity issues.
Innovation Solution
A composition comprising 0.01 to 10 percent by weight of organic acid, 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent is applied to finely etch the copper fuse line, removing copper and copper oxide residues while preventing damage to other conductive structures, with a pH value of 4.0 to 6.0, ensuring efficient etching without excessive damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a laser beam is used to cut the copper fuse line, then the fuse line can be cut to convert electrical pathways, but copper residue and copper oxide residue remain at the cutting portion causing defects
Solution Approach 1:
The patent applies a composition containing organic acid and oxidizing agent to the cutting portion of the fuse line before final electrical testing. This preliminary chemical treatment removes copper residue and copper oxide residue generated by laser cutting, preventing potential electrical defects while the device is still in manufacturing process
Solution Approach 2:
The patent converts the harmful copper oxide residue into a beneficial cleaning opportunity. By applying oxidizing agents (hydrogen peroxide, ozone, or potassium permanganate) followed by organic acid treatment, the harmful oxide is further oxidized and then dissolved, transforming the harmful residue into a removable byproduct that improves electrical reliability
2Object-generated harmful factors
If a strong etching composition is used to remove copper residue, then copper and copper oxide residues are removed effectively, but other conductive structures may be damaged
Solution Approach 1:
The patent uses a composition with locally optimized properties: organic acid (0.01-10% by weight) provides selective copper etching capability, while oxidizing agent (0.01-1.0% by weight) targets copper oxide specifically. The pH buffer (0.01-1.0% by weight) maintains pH 4.0-6.0 to control etching aggressiveness. This localized chemical property distribution enables effective copper removal while protecting aluminum and other conductive structures
Solution Approach 2:
The patent carefully controls composition parameters to achieve selective etching: organic acid concentration (0.01-10%), oxidizing agent concentration (0.01-1.0%), and pH value (4.0-6.0) are optimized to maximize copper removal efficiency while minimizing damage to other materials. The buffered pH ensures consistent etching behavior across different processing conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces defects by selectively removing copper residues and oxide, preventing reconnection of the cut fuse line, thereby minimizing current leakage and ensuring the integrity of semiconductor devices.
Implementation Method 1
The composition for etching copper may include about 0.01 to about 10 percent by weight of an organic acid... so that a cutting portion of the fuze line may be finely etched and at least one of a copper residue and a copper oxide residue remaining near the cutting portion may be substantially removed
Implementation Method 2
The composition for etching copper may include about 0.01 to 1.0 percent by weight of an oxidizing agent... so that a cutting portion of the fuze line may be finely etched and at least one of a copper residue and a copper oxide residue remaining near the cutting portion may be substantially removed
Data Source
AI summary
A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.