Copper Fluoride Corrosion Protection for Thin Film Transistors
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Solution Overview
Problem
The fabrication of thin film transistors and display apparatuses faces challenges due to corrosion of electrodes and wires caused by process gases used in patterning semiconductor and insulating layers, which damages other layers and affects the reliability of the devices.
Innovation Solution
The use of a copper layer pattern combined with a copper fluoride layer pattern on the electrodes and wires, where the copper fluoride layer acts as a corrosion prevention layer, effectively preventing reactions with chlorine-containing process gases during the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process gases are used to pattern semiconductor and insulating layers, then patterning is achieved, but corrosion of copper electrodes and wires occurs
Solution Approach 1:
A copper fluoride layer is introduced as an intermediary protective layer between the copper electrode and the chlorine-containing process gas. This layer acts as a mediator that prevents direct contact between the corrosive gas and the copper surface, thereby eliminating corrosion while allowing the process gas to perform its patterning function on other layers.
Solution Approach 2:
The copper fluoride layer is formed in advance before the chlorine-containing process gas is applied for patterning. This preliminary protective action creates a barrier that prevents the subsequent harmful corrosion effect, allowing the copper electrode to withstand the patterning process without damage.
2Reliability
If copper layer is used for electrodes, then electrical conductivity is improved, but susceptibility to corrosion by process gases increases
Solution Approach 1:
The electrode structure is transformed from a single-material copper layer to a composite structure consisting of a copper layer combined with a copper fluoride layer. The copper layer provides high electrical conductivity while the copper fluoride layer provides corrosion resistance, thereby achieving both electrical performance and chemical stability.
Solution Approach 2:
Different regions of the electrode structure are assigned different functions: the copper layer is optimized for electrical conductivity while the copper fluoride layer is optimized for corrosion resistance. This local differentiation of material properties allows each layer to excel at its specific function without compromising the other.
3Manufacturing precision
If process solutions are applied to pattern layers, then patterning is achieved, but damage to other layers occurs
Solution Approach 1:
The copper fluoride layer serves as a protective intermediary that shields the copper electrode and wire from damage by process solutions during patterning operations. This intermediary layer allows the process solutions to effectively pattern other layers while preventing unwanted side effects on the copper structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces corrosion of the copper layer patterns, ensuring the integrity and reliability of the thin film transistors and display apparatuses by protecting the copper layers from corrosive gases, thereby maintaining their structural and functional integrity.
Implementation Method 1
the copper fluoride layer pattern formed on both ends of the copper layer pattern to prevent the copper layer pattern from corroding
Data Source
AI summary
A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.