Copper Iodide Layer Formation for Wide Bandgap Memory Devices
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Solution Overview
Problem
The development of p-type metal oxide materials with wide bandgaps and high transparency for use in electronic devices, such as memory devices, has been limited by poor hole mobility and transparency issues in existing materials like tin oxide and copper oxide.
Innovation Solution
The formation of a copper iodide layer on a substrate using gas-phase deposition methods, involving the use of a copper precursor, a reducing agent, and an iodine reactant within a reaction chamber, to create a p-type semiconducting layer with improved properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If p-type metal oxide materials like tin oxide and copper oxide are used, then wide bandgap is achieved, but hole mobility and transparency are poor
Solution Approach 1:
The patent changes the chemical composition parameters by transitioning from metal oxides to metal halides (specifically copper iodide). This parameter change enables achieving both wide bandgap (>3.0 eV) and improved hole mobility simultaneously, resolving the contradiction between bandgap stability and carrier mobility reliability.
Solution Approach 2:
The patent employs composite material strategies by incorporating dopants into the copper iodide layer. This allows optimization of both optical properties (transparency) and electrical properties (hole mobility) through controlled composition, addressing the limitations of single-component metal oxide materials.
2Stability of the object's composition
If p-type metal oxide materials like tin oxide and copper oxide are used, then wide bandgap is achieved, but transparency is poor
Solution Approach 1:
The patent changes the material class from oxides to halides, which fundamentally alters the optical absorption characteristics. Copper iodide exhibits superior transparency in the visible spectrum while maintaining wide bandgap, resolving the contradiction between bandgap stability and illumination transparency.
3Reliability
If gas-phase deposition methods are used to form copper iodide layer, then improved carrier mobility is achieved, but process complexity increases
Solution Approach 1:
The patent replaces conventional thermal or solid-state processing mechanisms with gas-phase deposition processes. This substitution enables precise control over film quality and carrier mobility through vapor-phase reactions, achieving superior electrical properties despite increased process complexity.
Solution Approach 2:
The patent utilizes phase transitions of reactants from solid/liquid to gas phase during deposition, and controlled condensation during film formation. These phase transitions enable atomic-level control over film structure and properties, achieving high carrier mobility through precise deposition conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The copper iodide layer exhibits a wide bandgap greater than 3.0 eV, high transparency in the visible light spectrum, and improved carrier mobility, making it suitable for use in electronic devices such as memory devices.
Implementation Method 1
providing a copper precursor to the reaction chamber, providing an iodine reactant to the reaction chamber to form the copper iodide layer
Implementation Method 2
providing a reducing agent to the reaction chamber
Data Source
AI summary
A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.