Copper-Manganese Sputtering Target Particle Suppression
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Solution Overview
Problem
Existing copper-manganese alloy sputtering targets fail to adequately suppress particle generation during sputtering, which affects the quality and reliability of semiconductor devices, especially with miniaturization and integration advancements.
Innovation Solution
A high-purity copper-manganese-alloy sputtering target is produced with controlled amounts of manganese (0.05 to 20 wt.%) and carbon (2 wt ppm or less) to significantly reduce particle generation, where manganese is added to copper and the carbon content is precisely managed to minimize contamination and improve self-diffusion suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If conventional copper-manganese alloy sputtering targets are used, then self-diffusion suppression function is provided, but particle generation during sputtering is not sufficiently suppressed
Solution Approach 1:
The patent applies parameter changes by precisely controlling the carbon content to 2 wt ppm or less and maintaining specific manganese content (0.05 to 20 wt.%) in the copper-manganese alloy. This parameter optimization resolves the contradiction by suppressing particle generation during sputtering while preserving the self-diffusion suppression function, thereby improving semiconductor device quality without sacrificing reliability
Solution Approach 2:
The patent applies local quality by focusing on the specific local property of carbon content distribution and purity in the sputtering target material. By controlling carbon content to 2 wt ppm or less locally within the target structure, the patent suppresses particle generation at the sputtering surface while maintaining the overall alloy composition for self-diffusion suppression, thus resolving the contradiction between particle suppression and device reliability
2Object-generated harmful factors
If copper purity is increased to reduce particle generation, then particle generation is suppressed, but self-diffusion suppression function is weakened
Solution Approach 1:
The patent applies composite materials by creating a copper-manganese alloy system where manganese (0.05 to 20 wt.%) provides self-diffusion suppression through oxide barrier formation, while the copper base material (with carbon controlled to 2 wt ppm or less) ensures low particle generation. This composite approach resolves the contradiction by combining the benefits of both materials: copper's low particle generation and manganese's diffusion barrier properties
Solution Approach 2:
The patent applies the intermediary principle by using manganese oxide as a mediator between copper and the silicon substrate. The manganese oxide layer forms an intermediate barrier that prevents copper diffusion while the controlled low carbon content in the copper matrix ensures minimal particle generation during sputtering, thus resolving the contradiction between particle suppression and diffusion prevention
3Object-affected harmful factors
If manganese content is increased to enhance self-diffusion suppression, then diffusion barrier function is improved, but particle generation increases
Solution Approach 1:
The patent applies parameter changes by optimizing the manganese content within the specific range of 0.05 to 20 wt.% and, crucially, by controlling carbon content to 2 wt ppm or less. This dual parameter optimization resolves the contradiction: sufficient manganese provides the diffusion barrier function through oxide formation, while the strictly controlled low carbon content prevents particle generation that would otherwise increase with higher manganese additions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target effectively suppresses particle generation, enhancing the formation of fine semiconductor metal lines, improving yield and reliability, and providing excellent electron migration and corrosion resistance.
Implementation Method 1
a copper alloy prepared by adding manganese (Mn) to copper (Cu), having a self-diffusion suppression function by forming a barrier layer by itself through a reaction of Mn in the Cu-Mn alloy with oxygen in an insulating film
Implementation Method 2
the purified copper is used as a sputtering target
Data Source
AI summary
Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt.% of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 µm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.