Copper-Molybdenum Film Etching with Two-Step pH Separation

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Solution Overview

Problem

Conventional etching processes of copper-molybdenum films often result in metal residues and high production costs due to variable etching characteristics and the need for expensive solutions to meet different thickness specifications and sharp corner requirements.

Innovation Solution

An etching method involving a two-step process using an acidic first etching solution with a pH range of 0 to 5 for the copper film and a neutral or basic second etching solution with a pH range of 6 to 9 for the molybdenum film, both containing specific inorganic and organic acids, chelating agents, and inhibitors, to control the etching process and prevent residue formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a conventional etching process is used for copper-molybdenum film, then the etching can be completed in a single step, but metal residues occur due to variable etching characteristics

Engineering Contradiction:
Improveetching efficiencyVSAvoidetching precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent divides the etching process into two separate steps: first etching the copper layer with a copper-specific etching solution, then etching the molybdenum layer with a molybdenum-specific etching solution. This segmentation allows each etching solution to be optimized for its target metal, eliminating metal residues while maintaining efficient etching.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If expensive etching solutions are used to meet different thickness specifications and sharp corner requirements, then etching precision is improved, but production costs increase

Engineering Contradiction:
Improveetching precisionVSAvoidproduction cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent employs different etching solutions with specific compositions optimized for etching copper and molybdenum separately. The first etching solution contains copper-specific chemicals, while the second contains molybdenum-specific chemicals. This local optimization of etching chemistry for each metal layer achieves precise etching control without requiring expensive universal etching solutions.

Inventive Principle:
Principle #3Local quality

3Device complexity

If a single etching solution is used for both copper and molybdenum, then the process is simple, but etching characteristics vary causing metal residues

Engineering Contradiction:
Improveetching process complexityVSAvoidetching precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent divides the etching process into two separate steps: first etching the copper layer with a copper-specific etching solution, then etching the molybdenum layer with a molybdenum-specific etching solution. This segmentation allows each etching solution to be optimized for its target metal, eliminating metal residues while maintaining efficient etching.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively forms a copper-molybdenum film in a predetermined pattern by controlling the etching of each metal layer separately, reducing metal residues and production costs while meeting the requirements for various specifications and corner characteristics.

Implementation Method 1

etching a copper film of the copper-molybdenum film with an acidic first etching solution

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Implementation Method 2

etching a molybdenum film of the copper-molybdenum film with a neutral or basic second etching solution

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS11756797B2Etching method of copper-molybdenum film and array substrate
Publication Date: 2023.09.12 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US11756797B2 patent drawing
  • US11756797B2 patent drawing
  • US11756797B2 patent drawing

AI summary

A etching method of a copper-molybdenum film and an array substrate are provided. The etching method of a copper-molybdenum film includes forming a copper-molybdenum film on a substrate; forming a photoresist in a predetermined pattern on the copper-molybdenum film; etching a copper film of the copper-molybdenum film with an acidic first etching solution; etching a molybdenum film of the copper-molybdenum film with a neutral or basic second etching solution, to form the copper-molybdenum film in the predetermined pattern.