Copper Pad Interconnection with Titanium Barrier Layer
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Solution Overview
Problem
Copper is a challenging material for semiconductor devices due to its ease of oxidation, difficulty in etching, and high cost, which complicates the development of next-generation semiconductor devices requiring miniaturization, low power consumption, and high operating speed.
Innovation Solution
The implementation of a semiconductor device structure that includes a copper pad with a titanium pad barrier layer, an inorganic insulating layer, a buffer layer, a seed metal layer, a metal redistribution layer, and protective layers to enhance copper pad protection and integration, allowing for efficient interconnection and reduced oxidation risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper is used as conductive material, then low resistance and high conductivity are achieved, but oxidation resistance deteriorates
Solution Approach 1:
A pad barrier layer comprising titanium is introduced as an intermediary between the copper pad and the external environment. The titanium layer serves as a protective barrier that prevents oxidation of the copper pad while maintaining electrical conductivity through the inorganic insulating layer with controlled contact holes.
Solution Approach 2:
The interconnection structure employs a composite material system consisting of copper pad, titanium pad barrier layer, and inorganic insulating layer. This composite structure combines the high conductivity of copper with the oxidation resistance of titanium and the protective properties of the inorganic insulating layer.
2Reliability
If copper is used as conductive material, then high conductivity is achieved, but etching difficulty increases
Solution Approach 1:
The inorganic insulating layer acts as an intermediary that facilitates selective etching. Contact holes are formed through this layer to expose the copper pad, enabling controlled etching processes while protecting surrounding areas.
3Ease of manufacture
If copper is used as conductive material, then low cost is achieved, but oxidation resistance deteriorates
Solution Approach 1:
The titanium pad barrier layer serves as a cost-effective intermediary that prevents oxidation of copper without requiring expensive alternative materials. This layer provides the necessary protection while maintaining overall manufacturing cost efficiency.
Solution Approach 2:
The composite structure of copper and titanium layers provides oxidation resistance at a lower cost compared to using noble metals or other expensive oxidation-resistant materials alone.
Data Source
AI summary
A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.