Copper Bonding Pads With Oxide Barrier Layers for Reliable Die Bonding
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Solution Overview
Problem
Copper-to-copper bonding between mating pairs of copper pads becomes challenging as dimensions decrease, necessitating improved bonding reliability and yield in advanced semiconductor technology.
Innovation Solution
Incorporating a metal silicon oxide layer, such as manganese silicon oxide, between copper pads and using conductive barrier layers with varying electrochemical potentials to facilitate copper-to-copper bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If copper pad dimensions are reduced for advanced semiconductor technology, then device integration density is improved, but bonding reliability deteriorates
Solution Approach 1:
A metal silicon oxide layer (e.g., manganese silicon oxide) is introduced as an intermediary between the copper pad and the silicon oxide layer. This intermediate layer facilitates bonding by reducing cavity volume and promoting effective copper-to-copper bonding, thereby maintaining bonding reliability even as copper pad dimensions are reduced for higher integration density.
2Productivity
If copper pad dimensions are reduced, then integration density is improved, but bonding yield deteriorates
Solution Approach 1:
The metal silicon oxide layer serves as a mediator that enables successful bonding at reduced copper pad dimensions. By reducing cavity volumes and promoting effective bonding, it allows higher integration density to be achieved without sacrificing bonding yield.
Solution Approach 2:
The invention changes the chemical composition and physical properties of the bonding interface by introducing metal silicon oxide. This parameter change in the bonding structure enables reliable bonding at smaller copper pad dimensions, thereby improving integration density while maintaining bonding yield.
3Reliability
If cavity volumes between copper pads are reduced, then bonding reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The metal silicon oxide layer is deposited as an intermediary between the copper pad and silicon oxide layer using standard semiconductor deposition techniques. This approach reduces cavity volumes and improves bonding reliability while avoiding significant increases in manufacturing complexity, as the process integrates into existing fabrication workflows.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances bonding yield and reliability by reducing cavity volumes and promoting effective copper-to-copper bonding in semiconductor dies.
Implementation Method 1
inducing outdiffusion of manganese atoms from at least one of the first copper-manganese alloy portion and the second copper-manganese alloy portion into at least one of the first silicon oxide layer and the second silicon oxide layer to form at least one manganese silicon oxide layer
Implementation Method 2
bonding the second bonding pad to the first bonding pad via metal-to-metal bonding
Data Source
AI summary
A bonded assembly includes a first semiconductor die containing first semiconductor devices and a first bonding pad embedded within a first silicon oxide layer, where the first bonding pad includes a first copper containing portion, a second semiconductor die containing second semiconductor devices and a second bonding pad that is embedded within a second silicon oxide layer and is bonded to the first bonding pad via metal-to-metal bonding, where the second bonding pad includes a second copper containing portion, and at least one metal silicon oxide layer interposed between the first bonding pad and the second silicon oxide layer. In one embodiment, the at least one metal silicon oxide layer is a manganese silicon oxide layer.