Copper-Plated Power Package Structure for Lower Resistance Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor devices with wire-bonding interconnections face limitations in maximum electrical power due to high electrical resistance and heat generation, which restricts their performance and efficiency, especially in high-power applications.
Innovation Solution
The use of copper plating terminals with a wider cross-section instead of wire bonding, coupled with a molding compound for enhanced heat dissipation and mechanical protection, allows for increased electrical current flow and reduced resistance, enabling higher power handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If wire-bonding interconnections are used, then the device structure is conventional and easy to manufacture, but the electrical resistance is high and heat generation is excessive, limiting maximum electrical power
Solution Approach 1:
The patent changes the physical parameters of the interconnection by replacing wire-bonding with copper plating terminals that have a wider cross-section. This parameter change (increased cross-sectional area) directly reduces electrical resistance and heat generation, enabling higher power handling capability.
Solution Approach 2:
The patent substitutes the mechanical wire-bonding system with a copper plating terminal system. Instead of using thin wire bonds, the invention uses broader copper-plated terminals that provide lower resistance electrical pathways and improved heat dissipation, thereby increasing maximum electrical power.
2Power
If wire-bonding interconnections are used, then the manufacturing process is conventional, but the electrical resistance limits current flow and power handling
Solution Approach 1:
The patent modifies the interconnection geometry by using copper plating terminals with wider cross-sections compared to conventional wire-bonds. This parameter change increases the electrical current flow capability and improves performance efficiency by reducing resistive losses.
3Loss of energy
If thicker interconnection wires are used, then electrical resistance decreases and heat generation reduces, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent replaces the wire-bonding manufacturing process with a copper plating process. Instead of manually or mechanically bonding thin wires, the invention uses electroplating or similar processes to deposit copper terminals directly onto the semiconductor die, simplifying manufacturing while achieving lower resistance through broader terminal cross-sections.
Solution Approach 2:
The copper plating terminals serve multiple functions: they provide electrical interconnection, heat dissipation, and mechanical support. This multi-functionality eliminates the need for separate wire-bonding steps and additional thermal management components, simplifying the overall manufacturing process.
4Temperature
If conventional wire-bonding is used, then the package structure is simple, but heat dissipation is insufficient for high-power applications
Solution Approach 1:
The patent changes the thermal management approach by using copper plating terminals with larger surface areas compared to thin wire-bonds. The increased surface area of the copper terminals enhances heat dissipation capability through improved thermal conduction to the package substrate and surrounding environment.
Solution Approach 2:
The patent employs a composite structure combining copper plating (high thermal and electrical conductivity) with the semiconductor die and package materials. This composite approach creates efficient thermal pathways from the heat-generating die through the copper terminals to the package substrate, significantly improving heat dissipation for high-power applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the maximum electrical power handling and reduces heat generation, improving the performance and efficiency of semiconductor devices by utilizing copper plating terminals with a broader cross-section and a molding compound for effective heat dissipation and mechanical protection.
Implementation Method 1
The conductive interconnections carry electrical currents between the semiconductor die and the contacts mounted on the circuit
Implementation Method 2
the molding compound can provide heat dissipation and moisture isolation around the semiconductor die and the conductive interconnections
Data Source
AI summary
The present disclosure is directed to a power package with copper plating terminals. The power package includes at least two terminals coupled to a semiconductor die. An area of a first terminal is greater than an area of a second terminal. The first and second terminals extend to a first and second conductive layers in a backside of the package. A third conductive layer is coupled to a backside surface of the die that is coplanar with the first and second conductive layers. The terminals and conductive layers are copper plating. A first molding compound covers the die and terminals, while a second molding compound fills distances between the die and the extensions of the terminals. The copper plating and the molding compounds enhance the performance of the packaged device in a high-power circuit. In addition, robustness of the package is enhanced compared with conventional packages including wire bonding.